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==UV resist comparison table==
==UV resist comparison table==
Comparison of specifications and feature space of UV photoresists.
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab.


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"  
|-
|-
 
! scope=row| Resist
|-
| [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]] || [[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]] || [[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]] || [[Specific_Process_Knowledge/Lithography/4562|AZ 4562]] || [[Specific_Process_Knowledge/Lithography/SU-8|SU-8]] || [[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]
|-style="background:silver; color:black"
!Resist
|'''[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]'''
|'''[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]'''
|'''[[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]'''
|'''[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]'''
|'''[[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]'''
|'''[[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]'''
|-
 
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Resist tone
!Resist tone
|  
|
*Positive
*Positive
*Negative (image reversal)
*Negative (image reversal)
|Positive
| Positive
|Negative
| Negative
|Positive
| Positive
|Negative
| Negative
|
|  
*Positive
*Positive
*Negative (image reversal)
*Negative (image reversal)
|-
|-
 
! scope=row| Thickness range
|-style="background:silver; color:black"
| 1.5 - 4.2 µm || 1.5 - 4 µm || 1.5 - 4 µm || 5 - 10 µm || 1 - 200 µm || 0.5 - 5 µm
!Thickness range
|1.5 - 4.2 µm
|1.5 - 4 µm
|1.5 - 4 µm
|5 - 10 µm
|1 - 200 µm
|0.5 - 5 µm
|-
|-
 
! scope=row| Coating tool
|-
|  
|-style="background:WhiteSmoke; color:black"
Automatic spin coaters:
!Coating tool
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV
*Spin coater: Gamma E-beam & UV  


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
Spray coater
*Spin coater: Labspin 2
|  
*Spin coater: Labspin 3
Automatic spin coaters:
*Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
*Spin coater: Labspin 2
*Spin coater: Labspin 3
*Spin coater: RCD8
|
Manual coaters:<br>
*Spin coater: RCD8
or
*Spin coater: Labspin 2
*Spin coater: Labspin 3
|
Spray coater
Spray coater
|-
|  
Automatic spin coaters:
*Spin coater: Gamma UV lithography


|-
Manual spin coaters:
|-style="background:Silver; color:black"
* Spin coater: Labspin 02
!Spectral sensitivity
* Spin coater: Labspin 03
|310 - 420 nm
* Spin coater: RCD8
|310 - 445 nm
|310 - 380 nm
|310 - 445 nm
|300 - 375 nm
|310 - 440 nm
|-


|-
Spray coater
|-style="background:WhiteSmoke; color:black"
|  
!Exposure tool
Automatic spin coaters:
|align="center" colspan="6"|Mask aligner or Maskless aligner
*Spin coater: Gamma E-beam & UV
|-


Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Spray coater
|-
|-
|-style="background:silver; color:black"
! scope=row| Spectral sensitivity
!Developer
| 310 - 420 nm || 310 - 445 nm || 310 - 380 nm || 310 - 445 nm || 300 - 375 nm || 310 - 440 nm
|
*AZ 351B
*AZ 726 MIF
|
*AZ 351B
*AZ 726 MIF
|
*AZ 726 MIF
*[[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development]] possible
|AZ 726 MIF
|mr-DEV 600 (PGMEA)
|AZ 726 MIF
|-
 
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Exposure tool
!Rinse
|
|DIW
* Maskless aligners
|DIW
* Mask aligners
|DIW
|  
|DIW
* Maskless aligners
|IPA
* Mask aligners
|DIW
|  
* Maskless aligners
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|  
* Maskless aligners
* Mask aligners
|-
|-
 
! scope=row| Developer
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* [[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development possible]]
|
AZ 726 MIF (2.38% TMAH)
|
mr-DEV 600 (PGMEA)
|
AZ 726 MIF (2.38% TMAH)
|-
|-
|-style="background:silver; color:black"
! scope=row| Development rinse agent
!Remover
| DIW || DIW || DIW || DIW || IPA || DIW
|
*Acetone
*Remover 1165
|
*Acetone
*Remover 1165
|
*Acetone
*Remover 1165
|
Remover 1165
|
Cured SU-8 is practically insoluble
 
Plasma ashing can remove crosslinked SU-8
|
*Acetone
*Remover 1165
|-
|-
 
! scope=row| Remover
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
Remover 1165 (NMP)
|
* Cross-linked SU-8 is practically insoluble
* Oxygen plasma ashing can remove cross-linked SU-8
|
* Acetone
* Remover 1165 (NMP)
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Comments
!Comments
| Good adhesion for wet etch
|
| High selectivity for dry etch
*Can be used for both positive and image reversed (negative) processes with resist thickness between 1 and 4 µm.
| Negative sidewalls for lift-off
*Good adhesion for wet etch.
| For processes with resist thickness between 6 µm and 25 µm
|
High selectivity for dry etch
|
|
Negative sidewalls for lift-off
* High aspect ratio
|
* Resist thickness 1 µm to hundreds of µm
For processes with resist thickness between 6 µm and 25 µm
* Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
|
* New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
*High aspect ratio
| TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
*Resist thickness 1 µm to several 100 µm
*Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
*New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
|
Spray coater specific resist
|-
 
|-
|-
|-style="background:silver; color:black"
! scope=row| Process flow examples
!Process flow examples
|  
|
Mask aligner:<br>
Mask aligner:<br>
[[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]<br>
[[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]<br>
Line 192: Line 155:
[[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]<br>
[[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]<br>
[[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
[[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
|
|  
Mask aligner:<br>
Mask aligner:<br>
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
Line 199: Line 162:
Maskless aligner:<br>
Maskless aligner:<br>
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
|
|  
Mask aligner:<br>
Mask aligner:<br>
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
Line 206: Line 169:
Maskless aligner:<br>
Maskless aligner:<br>
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
|
|  
Mask aligner:<br>
Mask aligner:<br>
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
Line 213: Line 176:
Maskless aligner:<br>
Maskless aligner:<br>
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
|
|  
Mask aligner:<br>
Mask aligner:<br>
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]


Maskless aligner:<br>
Maskless aligner:<br>
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]


NB! Most of the process knowledge about SU-8 is based in research groups
|
|}


NB! Most of the process knowledge on SU-8 is based in research groups
|
TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
|-
|}
<br>
'''Other process flows:'''
'''Other process flows:'''
[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.


[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.
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