Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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==Exposure dose for maskless aligners== | ==Exposure dose for maskless aligners== | ||
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values. | ||
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH. | All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH. | ||