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Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,931 edits
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| 1
| 1
| ≤5 µm
| ≤5 µm
| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s
|  
Priming: HMDS<BR>
Rehydration after SB: 1 hour (may not be necessary)<br>
Exposure: Single exposure<br>
Degassing after exposure: 1 hour (may not be necessary)<br>
Development: Multiple puddles, 5 x 60 s
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|-


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