Jump to content

Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

Jehem (talk | contribs)
Jehem (talk | contribs)
Line 551: Line 551:
|  
|  
|  
|  
| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s
|  
Priming: HMDS<BR>
Rehydration after SB: 1 hour (may not be necessary)<br>
Exposure: Single exposure<br>
Degassing after exposure: 1 hour (may not be necessary)<br>
Development: Multiple puddles, 5 x 60 s
|-
|-