Jump to content

Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,890 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,890 edits
Line 623: Line 623:
<!-- The Aligner: Maskless 02 has a 375 nm laser light source, and a 405 nm laser light source, each with a FWHM of ~1 nm. -->
<!-- The Aligner: Maskless 02 has a 375 nm laser light source, and a 405 nm laser light source, each with a FWHM of ~1 nm. -->
The Aligner: Maskless 02 has a 375 nm laser light source with a FWHM of ~1 nm.
The Aligner: Maskless 02 has a 375 nm laser light source with a FWHM of ~1 nm.
'''New resists'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. The following table contains only information about the new resist versions.
'''New writehead'''<br>
As of 2023-03-21 the MLA2 has a new writehead installed, converting it from a write mode 1 tool to a write mode 2 tool. This makes all previous dose/defocus settings obsolete. The following table contains only the dose/defocus values for the new writehead.


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
Line 643: Line 649:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5206E<br>(AZ5214E diluted with PGMEA 1:1 per volume)<br><span style="color:red">Old German version</span>
!AZ MiR 701
| Long ago
| 2023-03-21<br>jehem
|rowspan="2"| 0.5 µm
| 1.5 µm
|rowspan="2"| 375 nm
| 375
| Optical
| Fast
| 60 mJ/cm<sup>2</sup>
| -6
| 1 µm (not optimized)
| Dev: 2xSP30s
 
|-style="background:WhiteSmoke; color:black"
| Long ago
| Optical
| Optical
| Quality
| Quality
| 60 mJ/cm<sup>2</sup>
| 415 mJ/cm<sup>2</sup>
| -6
| 6
| ~750 nm (not optimized)
| 1 µm<br>Tested using dehydration reducing measures
| Dev: 2xSP30s
|  
PEB: 60s @ 110°C<br>
Dev: SP60s
|-
|-


|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!rowspan="3"| AZ 5214E<br><span style="color:red">Old German version</span>
!AZ nLOF 2020
| Long ago
|rowspan="3"| 1.5 µm
| 405 nm
| Optical
| Fast
| 90 mJ/cm<sup>2</sup>
| -2
| 1-2 µm
| Dev: SP60s
 
|-style="background:silver; color:black"
| Long ago
|rowspan="2"| 375 nm
| Optical
| Fast
| 65 mJ/cm<sup>2</sup>
| 2
| ~1 µm
| Dev: SP60s
 
|-style="background:silver; color:black"
| Long ago
| Optical
| Quality
| 65 mJ/cm<sup>2</sup>
| 2
| ~750 nm
| Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"| AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
| Long ago
|rowspan="3"| 1.5 µm
| 405 nm
| Optical
| Fast
| 200 mJ/cm<sup>2</sup>
| -5
| ~1 µm (not optimized)
| PEB: 60s@110°C, Dev: SP60s
 
|-style="background:WhiteSmoke; color:black"
| Long ago
|rowspan="2"| 375 nm
| Optical
| Fast
| 170 mJ/cm<sup>2</sup>
| -5
| 1 µm
| PEB: 60s@110°C, Dev: SP60s
 
|-style="background:WhiteSmoke; color:black"
| Long ago
| Optical
| Quality
| 180 mJ/cm<sup>2</sup>
| -6 (Feb 2019) <br> -2 (Apr 2019)
| <750 nm
| PEB: 60s@110°C, Dev: SP60s <br> Large structures probably over-exposed
|-
 
|-
|-style="background:silver; color:black"
!rowspan="2"| AZ nLOF 2020
| 2021-02-22<br>jehem
|rowspan="2"| 2 µm
|rowspan="2"| 375 nm
| Optical
| Fast
| 350 mJ/cm<sup>2</sup>
| 0
| 1 µm
| PEB: 120s@110°C, Dev: SP60s
 
|-style="background:silver; color:black"
| 2021-02-22<br>jehem
| 2021-02-22<br>jehem
| 2.0 µm
| 375
| Optical
| Optical
| Quality
| Quality
Line 755: Line 679:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
!AZ 5214E
| 2021-08-20<br>jehem
| 2021-08-20<br>jehem
| 1.5 µm
| 1.5 µm
Line 770: Line 694:
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!AZ 5214E image reversal<br><span style="color:green">New Japanese version</span>
!AZ 5214E image reversal
| 2021-11-25<br>jehem
| 2021-11-25<br>jehem
| 2.2 µm
| 2.2 µm
Line 783: Line 707:


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:whitesmoke; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
!AZ 4562
| 2021-08-20<br>jehem
| 1.5 µm
| 375
| Optical
| Fast
| 200 mJ/cm<sup>2</sup>
| -6
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-
 
|-
|-style="background:silver; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
| 2021-12-08<br>jehem
| 2021-12-08<br>jehem
| 10 µm
| 10 µm
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Resist/UVresist"