Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions
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== Generalized workflow == | |||
While the EBL workflow resembles that of UV lithography there are a few additional complications and the parameter space is somewhat larger. The complications all arise from using electrons rather than light for exposure. Since a beam of electrons is used for exposure the substrate must be sufficiently conductive and grounded in order not to build up a charge. If the substrate in itself is not conductive a thin metal film must be applied to it. Another complication is secondary exposure from backscattered electrons. This is a much bigger topic and covered in the Proximity Effect Correction section. A generalised workflow is shown below. | |||
= E-beam resists = | = E-beam resists = | ||