Specific Process Knowledge/Lithography: Difference between revisions

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Line 46: Line 46:
!Pattern size range
!Pattern size range
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*Resist type, thickness, and pattern dependent
~0.6 µm and up<br>
*~0.6 µm and up
(resist type, thickness, and pattern dependent)
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*pattern type, shape and pitch dependent
~200 nm and up<br>
*~200 nm and up
(pattern type, shape and pitch dependent)
|
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*~12 nm - 1 µm (and larger at high currents)
~12 nm - 1 µm<br>
(and larger at high currents)
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*~20 nm and up
~20 nm and up
|-
|-


Line 61: Line 62:
!Resist type
!Resist type
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*UV sensitive:
UV sensitive:
**AZ 5214E, AZ 4562, AZ MiR 701 (positive)
*AZ 5214E, AZ 4562, AZ MiR 701 (positive)
**AZ 5214E, AZ nLOF 2020, SU-8 (negative)
*AZ 5214E, AZ nLOF 2020, SU-8 (negative)
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*DUV sensitive
DUV sensitive
**JSR KRF M230Y, JSR KRF M35G (positive)
*JSR KRF M230Y, JSR KRF M35G (positive)
**UVN2300-0.8 (negative)
*UVN2300-0.8 (negative)
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*E-beam sensitive
E-beam sensitive
**AR-P6200 CSAR, ZEP502A , PMMA (positive)
*AR-P6200 CSAR, ZEP502A , PMMA (positive)
**HSQ, mr-EBL, AR-N 7520 (negative)
*HSQ, mr-EBL, AR-N 7520 (negative)
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*Imprint polymers:
Imprint polymers:
**Topas
*Topas
**PMMA
*PMMA
**mr-I 7030R
*mr-I 7030R
|-
|-


Line 83: Line 84:
!Resist thickness range
!Resist thickness range
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~0.5µm to 200µm
~0.5 µm to 200 µm
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~50nm to 2µm
~50 nm to 2 µm
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~30nm to 1 µm
~30 nm to 1 µm
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~ 100nm to 2µm
~ 100 nm to 2 µm
|-
|-


Line 96: Line 97:
!Typical exposure time
!Typical exposure time
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10s-3min pr. wafer using mask aligners.
10 s - 3 min pr. wafer using mask aligners<br>
 
10 min - 5 hours pr. wafer using maskless aligners
10min-5hours pr. wafer using maskless aligners.
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Process depended, depends on pattern, pattern area and dose.
Process dependent:
*Pattern
*Pattern area
*Dose


Throughput is up to 60 wafers/hour.
Throughput is up to 60 wafers/hour
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Depends on dose, Q [µC/cm<sup>2</sup>], beam current, I [A], and pattern area, A [cm<sup>2</sup>]:
Process dependent:
*Dose, Q [µC/cm<sup>2</sup>]
*Beam current, I [A]
*Pattern area, a [cm<sup>2</sup>]


t = Q*A/I
time [s] = Q*a/I
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Process depended, depends also on heating and cooling temperature rates
Process dependent, including heating/cooling rates
|-
|-


Line 116: Line 122:
!Substrate size
!Substrate size
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*small samples, down to 3x3 mm<sup>2</sup>
*chips down to 3 mm x 3 mm
*50 mm wafers
*50 mm wafers
*100 mm wafers
*100 mm wafers
Line 126: Line 132:
*200 mm wafers
*200 mm wafers
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We have cassettes that fit to
We have cassettes fitting:
*4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
*4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
*6 wafers of 50 mm in size
*6 wafers of 50 mm in size
Line 143: Line 149:
!'''Allowed materials'''
!'''Allowed materials'''
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*Any standard cleanroom material  
Any standard cleanroom material  
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*Any standard cleanroom material  
Any standard cleanroom material  
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*Any standard cleanroom material, except materials that will degas and special treatment for graphene  
Any standard cleanroom material, except:
*Materials that will degas
*Graphene requires special treatment   
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*Any standard cleanroom material  
Any standard cleanroom material  
|-
|-
|}
|}

Revision as of 15:38, 24 January 2023

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There are four different types of lithography available at DTU Nanolab:


Comparing lithography methods at DTU Nanolab

UV Lithography DUV Stepper Lithography E-beam Lithography Nano Imprint Lithography
Generel description Pattern transfer via UltraViolet (UV) light Pattern transfer via Deep UltraViolet (DUV) light Patterning by electron beam Pattern transfer via hot embossing (HE)
Pattern size range

~0.6 µm and up
(resist type, thickness, and pattern dependent)

~200 nm and up
(pattern type, shape and pitch dependent)

~12 nm - 1 µm
(and larger at high currents)

~20 nm and up

Resist type

UV sensitive:

  • AZ 5214E, AZ 4562, AZ MiR 701 (positive)
  • AZ 5214E, AZ nLOF 2020, SU-8 (negative)

DUV sensitive

  • JSR KRF M230Y, JSR KRF M35G (positive)
  • UVN2300-0.8 (negative)

E-beam sensitive

  • AR-P6200 CSAR, ZEP502A , PMMA (positive)
  • HSQ, mr-EBL, AR-N 7520 (negative)

Imprint polymers:

  • Topas
  • PMMA
  • mr-I 7030R
Resist thickness range

~0.5 µm to 200 µm

~50 nm to 2 µm

~30 nm to 1 µm

~ 100 nm to 2 µm

Typical exposure time

10 s - 3 min pr. wafer using mask aligners
10 min - 5 hours pr. wafer using maskless aligners

Process dependent:

  • Pattern
  • Pattern area
  • Dose

Throughput is up to 60 wafers/hour

Process dependent:

  • Dose, Q [µC/cm2]
  • Beam current, I [A]
  • Pattern area, a [cm2]

time [s] = Q*a/I

Process dependent, including heating/cooling rates

Substrate size
  • chips down to 3 mm x 3 mm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers

We have cassettes fitting:

  • 4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
  • 6 wafers of 50 mm in size
  • 3 wafers of 100 mm in size
  • 1 wafer of 150 mm in size
  • 1 wafer of 200 mm in size

Only one cassette can be loaded at a time

  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Any standard cleanroom material

Any standard cleanroom material

Any standard cleanroom material, except:

  • Materials that will degas
  • Graphene requires special treatment

Any standard cleanroom material


Equipment Pages

Resist

Pretreatment

Coating

Baking

UV Exposure

Deep-UV Exposure

Electron Beam Exposure

NanoImprint Lithography


Development

Descum

Lift-off

Strip


Lithography Tool Package Training

DTU Nanolab offers a Tool Package Training in Lithography; the course includes theory on lithographic processes and equipment. After the TPT has been successfully completed, you can begin training on the lithography equipment at DTU Nanolab.

You are required to pass this course, in order to get access to using the lithography equipment inside the DTU Nanolab fabrication facility (The Cleanroom).

For details, dates, and course material, please check the course description under Courses.


Lithography Tool Package Training
Signing up for the course

The course is in DTU Learn. You sign up for the course by enroling yourself in the course "DTU Nanolab TPT: Lithography".

  • Log into DTU Learn here: DTU Learn
  • Select the menu "Discover"
  • Search for "Nanolab"

Select the course "DTU Nanolab TPT: Lithography"

  • Press "Enroll in Course"
  • You have now signed up for the course.
  • Go to the course page in DTU Learn and choose "Course Content" and "Content"
  • Watch the lecture videos, read the learning material, and complete all the quizzes.
Learning Objectives

Learn about the fundamentals of lithographic processing in a cleanroom:

  • Coating
  • Exposure
  • Development
  • Post-processing


Knowledge and Information about Lithography

Literature


Lecture videos

  • Lithography TPT lecture videos (7 videos, 2:41 hours in total) on YouTube
  • A full lecture series from a UT Austin course on microfabrication by "litho guru" Chris Mack. Half of the lectures are on (projection) lithography :-)


Lithography TPT lecture slides

Training videos

Playlists on YouTube:


Manuals


Process Flows


Resists


UV Exposure


Electron Beam Exposure


Deep-UV Exposure


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