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Specific Process Knowledge/Lithography: Difference between revisions

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!Pattern size range
!Pattern size range
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*Resist type, thickness, and pattern dependent
~0.6 µm and up<br>
*~0.6 µm and up
(resist type, thickness, and pattern dependent)
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*pattern type, shape and pitch dependent
~200 nm and up<br>
*~200 nm and up
(pattern type, shape and pitch dependent)
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*~12 nm - 1 µm (and larger at high currents)
~12 nm - 1 µm<br>
(and larger at high currents)
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*~20 nm and up
~20 nm and up
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!Resist type
!Resist type
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*UV sensitive:
UV sensitive:
**AZ 5214E, AZ 4562, AZ MiR 701 (positive)
*AZ 5214E, AZ 4562, AZ MiR 701 (positive)
**AZ 5214E, AZ nLOF 2020, SU-8 (negative)
*AZ 5214E, AZ nLOF 2020, SU-8 (negative)
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*DUV sensitive
DUV sensitive
**JSR KRF M230Y, JSR KRF M35G (positive)
*JSR KRF M230Y, JSR KRF M35G (positive)
**UVN2300-0.8 (negative)
*UVN2300-0.8 (negative)
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*E-beam sensitive
E-beam sensitive
**AR-P6200 CSAR, ZEP502A , PMMA (positive)
*AR-P6200 CSAR, ZEP502A , PMMA (positive)
**HSQ, mr-EBL, AR-N 7520 (negative)
*HSQ, mr-EBL, AR-N 7520 (negative)
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*Imprint polymers:
Imprint polymers:
**Topas
*Topas
**PMMA
*PMMA
**mr-I 7030R
*mr-I 7030R
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!Resist thickness range
!Resist thickness range
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~0.5µm to 200µm
~0.5 µm to 200 µm
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~50nm to 2µm
~50 nm to 2 µm
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~30nm to 1 µm
~30 nm to 1 µm
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~ 100nm to 2µm
~ 100 nm to 2 µm
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!Typical exposure time
!Typical exposure time
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10s-3min pr. wafer using mask aligners.
10 s - 3 min pr. wafer using mask aligners<br>
 
10 min - 5 hours pr. wafer using maskless aligners
10min-5hours pr. wafer using maskless aligners.
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Process depended, depends on pattern, pattern area and dose.
Process dependent:
*Pattern
*Pattern area
*Dose


Throughput is up to 60 wafers/hour.
Throughput is up to 60 wafers/hour
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Depends on dose, Q [µC/cm<sup>2</sup>], beam current, I [A], and pattern area, A [cm<sup>2</sup>]:
Process dependent:
*Dose, Q [µC/cm<sup>2</sup>]
*Beam current, I [A]
*Pattern area, a [cm<sup>2</sup>]


t = Q*A/I
time [s] = Q*a/I
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Process depended, depends also on heating and cooling temperature rates
Process dependent, including heating/cooling rates
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!Substrate size
!Substrate size
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*small samples, down to 3x3 mm<sup>2</sup>
*chips down to 3 mm x 3 mm
*50 mm wafers
*50 mm wafers
*100 mm wafers
*100 mm wafers
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*200 mm wafers
*200 mm wafers
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We have cassettes that fit to
We have cassettes fitting:
*4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
*4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
*6 wafers of 50 mm in size
*6 wafers of 50 mm in size
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!'''Allowed materials'''
!'''Allowed materials'''
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*Any standard cleanroom material  
Any standard cleanroom material  
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*Any standard cleanroom material  
Any standard cleanroom material  
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*Any standard cleanroom material, except materials that will degas and special treatment for graphene  
Any standard cleanroom material, except:
*Materials that will degas
*Graphene requires special treatment   
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*Any standard cleanroom material  
Any standard cleanroom material  
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