Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 162: | Line 162: | ||
|Gamma E-beam & UV or Labspin 2/3 | |Gamma E-beam & UV or Labspin 2/3 | ||
|Anisole | |Anisole | ||
|*AR-600-546 | | | ||
*AR-600-546 | |||
*AR-600-548 | *AR-600-548 | ||
*N50 | *N50 | ||
*MIBK:IPA | *MIBK:IPA | ||
|IPA | |IPA | ||
|AR-600-71 | | | ||
*AR-600-71 | |||
*Remover 1165 | |||
|[[media:Process_Flow_CSAR.docx|Process Flow CSAR.docx]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br> | |[[media:Process_Flow_CSAR.docx|Process Flow CSAR.docx]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br> | ||