Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer. | ** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer. | ||
::A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|on this page]]. | ::A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|on this page]]. | ||
* '''Thickness of resist''': In general, it is recommended to work at or below an aspect ratio of ~1, i.e. where the width of the pattern is not smaller than the thickness of the resist. Furthermore, when you decide for the resist thickness, consider which transfer you need: | * '''Thickness of resist''': In general, it is recommended to work at or below an aspect ratio of ~1, i.e. where the width of the pattern is not smaller than the thickness of the resist. Furthermore, when you decide for the resist thickness, consider which transfer you need: | ||