Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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** Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask is an exact copy of the pattern which is to remain on the wafer. | ** Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask is an exact copy of the pattern which is to remain on the wafer. | ||
** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer. | ** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer. | ||
::A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|on this page]]. | ::A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|on this page]]. | ||
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