Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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=Process information=
=Process information=
==[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|UV Resist Overview]]==
===[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|UV Resist Overview]]===
*[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]
*[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]
*[[Specific Process Knowledge/Lithography/Coaters|Coaters]]
*[[Specific Process Knowledge/Lithography/Coaters|Coaters]]

Revision as of 15:08, 24 November 2014

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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.


Mask Design

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Mask Design

Resist Overview

Resist Polarity Spectral sensitivity Manufacturer Comments Technical reports Spin Coating Exposure Developer Rinse Remover Process flows (in docx-format)
AZ 5214E Positive but the image can be reversed 310 - 420 nm AZ Electronic Materials Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. AZ5214E.pdf‎ SSE,

KS Spinner or

Spin coater: Manual Labspin

KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 351B developer

or

AZ 726 MIF developer

DI water Acetone

Process_Flow_AZ5214_pos.docx‎ Process_Flow_AZ5214_rev.docx‎

AZ 4562 Positive 310 - 440 nm AZ Electronic Materials For process with resist thickness between 6 and 25 µm. AZ4500.pdf‎ SSE or

KS Spinner

KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 351B developer

or

AZ 726 MIF developer

DI water Acetone Process_Flow_thick_AZ4562.docx‎
AZ MiR 701 Positive 310 - 445 nm AZ Electronic Materials High selectivity for dry etch.

Resist thickness 1 - 2 µm.

AZ_MiR_701.pdf‎ Spin Track 1 + 2 KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_MiR701.docx‎
AZ nLOF 2020 Negative 310 - 380 nm AZ Electronic Materials Negative sidewalls for lift-off.

Resist thickness 1.5 - 3 µm.

AZ_nLOF_2020.pdf‎ Spin Track 1 + 2 KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_nLOF_2020.docx‎
SU-8 Negative 350 - 400 nm Microchem High aspect ratio.

Resist thickness 1 µm to several 100 µm.

SU-8_DataSheet_2005.pdf‎, SU-8_DataSheet_2075.pdf‎ KS Spinner Aligner-6inch,

KS Aligner or

Aligner: MA6 - 2

mr-Dev 600 developer (PGMEA) IPA Plasma ashing can remove crosslinked SU-8 Process_Flow_SU8_70um.docx‎


Process information

UV Resist Overview

UV Lithography Equipment

Pretreatment

Coaters

UV Exposure


Baking

Development

Strip

Lift-off