Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|28 mJ/cm<sup>2</sup> per µm resist for i-line, probably increasing with increasing thickness.
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


Multiple exposure recommended.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or


½ dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]


Line 94: Line 94:
|[[media:AZ_MiR_701.pdf‎|AZ_MiR_701.pdf‎]]
|[[media:AZ_MiR_701.pdf‎|AZ_MiR_701.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]  
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]  
|Preliminary results:
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


105 mJ/cm<sup>2</sup> per µm resist for i-line.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or


1/5 dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|DI water
Line 112: Line 112:
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|<30 mJ/cm<sup>2</sup> per µm resist for i-line, decreasing with increasing thickness.
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


Same dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|DI water
Line 128: Line 130:
|[[media:SU-8_DataSheet_2005.pdf‎|SU-8_DataSheet_2005.pdf‎]], [[media:SU-8_DataSheet_2075.pdf‎|SU-8_DataSheet_2075.pdf‎]]
|[[media:SU-8_DataSheet_2005.pdf‎|SU-8_DataSheet_2005.pdf‎]], [[media:SU-8_DataSheet_2075.pdf‎|SU-8_DataSheet_2075.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|Thickness and process dependent.
|[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]],
 
[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]] or


Refer to process datasheet and literature.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]
|[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]]
|[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]]
|IPA
|IPA

Revision as of 11:54, 11 November 2014

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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.


Mask Design

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Mask Design

Resist Overview

Resist Polarity Manufacturer Comments Technical reports Spin Coating Exposure Developer Rinse Remover Process flows (in docx-format)
AZ 5214E Positive but the image can be reversed AZ Electronic Materials Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. AZ5214E.pdf‎ SSE,

KS Spinner or

Spin coater: Manual Labspin

KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 351B developer

or

AZ 726 MIF developer

DI water Acetone

Process_Flow_AZ5214_pos.docx‎ Process_Flow_AZ5214_rev.docx‎

AZ 4562 Positive AZ Electronic Materials For process with resist thickness between 6 and 25 µm. AZ4500.pdf‎ SSE or

KS Spinner

KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 351B developer

or

AZ 726 MIF developer

DI water Acetone Process_Flow_thick_AZ4562.docx‎
AZ MiR 701 Positive AZ Electronic Materials High selectivity for dry etch. AZ_MiR_701.pdf‎ Spin Track 1 + 2 KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_MiR701.docx‎
AZ nLOF 2020 Negative AZ Electronic Materials Negative sidewalls for lift-off. AZ_nLOF_2020.pdf‎ Spin Track 1 + 2 KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_nLOF_2020.docx‎
SU-8 Negative Microchem SU-8_DataSheet_2005.pdf‎, SU-8_DataSheet_2075.pdf‎ KS Spinner Aligner-6inch,

KS Aligner or

Aligner: MA6 - 2

mr-Dev 600 developer (PGMEA) IPA Plasma ashing can remove crosslinked SU8. Process_Flow_SU8_70um.docx‎


UV Lithography Equipment


Pretreatment

Coaters

UV Exposure

Baking

Development

Strip

Lift-off