Specific Process Knowledge/Lithography/UVLithography

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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.

Mask Design

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Mask Design

Resist Overview

Resist	Polarity	Manufacturer	Comments	Technical reports	Spin Coating	Exposure	Developer	Rinse	Remover	Process flows (in docx-format)
AZ 5214E	Positive but the image can be reversed	AZ Electronic Materials	Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm.	AZ5214E.pdf‎	SSE, KS Spinner or Spin coater: Manual Labspin	Positive process: 23-33 mJ/cm2 per µm resist for i-line. ½ dose for broadband exposure. Reverse process: 10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake. ½ dose for broadband exposure.	AZ 351B developer or AZ 726 MIF developer	DI water	Acetone	Process_Flow_AZ5214_pos.docx‎ Process_Flow_AZ5214_rev.docx‎
AZ 4562	Positive	AZ Electronic Materials	For process with resist thickness between 6 and 25 µm.	AZ4500.pdf‎	SSE or KS Spinner	28 mJ/cm2 per µm resist for i-line, probably increasing with increasing thickness. Multiple exposure recommended. ½ dose for broadband exposure.	AZ 351B developer or AZ 726 MIF developer	DI water	Acetone	Process_Flow_thick_AZ4562.docx‎
AZ MiR 701	Positive	AZ Electronic Materials	High selectivity for dry etch.	AZ_MiR_701.pdf‎	Spin Track 1 + 2	Preliminary results: 105 mJ/cm2 per µm resist for i-line. 1/5 dose for broadband exposure.	AZ 726 MIF developer	DI water	Remover 1165	Process_Flow_AZ_MiR701.docx‎
AZ nLOF 2020	Negative	AZ Electronic Materials	Negative sidewalls for lift-off.	AZ_nLOF_2020.pdf‎	Spin Track 1 + 2	<30 mJ/cm2 per µm resist for i-line, decreasing with increasing thickness. Same dose for broadband exposure.	AZ 726 MIF developer	DI water	Remover 1165	Process_Flow_AZ_nLOF_2020.docx‎
SU-8	Negative	Microchem		SU-8_DataSheet_2005.pdf‎, SU-8_DataSheet_2075.pdf‎	KS Spinner	Thickness and process dependent. Refer to process datasheet and literature.	mr-Dev 600 developer (PGMEA)	IPA	Plasma ashing can remove crosslinked SU8.	Process_Flow_SU8_70um.docx‎

UV Lithography Equipment

Pretreatment HMDS BHF Oven 250C Coaters SSE Spinner Spin Track 1 + 2 KS Spinner Manual Spinner (Polymers) Manual Spinner 1 (Laurell) Spin coater: Manual Labspin Spray Coater UV Exposure KS Aligner Aligner-6inch III-V Aligner Inclined UV Lamp	Baking Hotplates Ovens Development Developer-1 and Developer-2 Developer-6inch SU8-Developer Developer-TMAH Strip Plasma Asher 1 Plasma Asher 2 III-V Plasma Asher Rough Acetone Strip Fine Acetone Strip Lift-off Lift-off wet bench Lift-off (4", 6")