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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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|For process with resist thickness between 6 and 25um.  
|For process with resist thickness between 6 and 25um.  
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]] or
 
[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|28 mJ/cm<sup>2</sup> per µm resist for i-line, probably increasing with increasing thickness.
|28 mJ/cm<sup>2</sup> per µm resist for i-line, probably increasing with increasing thickness.