Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 31: | Line 31: | ||
|'''AZ5214E''' | |'''AZ5214E''' | ||
|Positive but can be reverse | |Positive but can be reverse | ||
|AZ Electronic Materials | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|Can be used for both positive and reverse processes with resist thickness between 1 to 4um. | |Can be used for both positive and reverse processes with resist thickness between 1 to 4um. | ||
|[[media:AZ5214E.pdf|AZ5214E.pdf]] | |[[media:AZ5214E.pdf|AZ5214E.pdf]] | ||
| Line 46: | Line 46: | ||
|'''AZ4562''' | |'''AZ4562''' | ||
|Positive | |Positive | ||
|AZ Electronic Materials | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|For process with resist thickness between 6 and 25um. | |For process with resist thickness between 6 and 25um. | ||
|[[media:AZ4500.pdf|AZ4500.pdf]] | |[[media:AZ4500.pdf|AZ4500.pdf]] | ||
| Line 59: | Line 59: | ||
|'''AZ MiR 701''' | |'''AZ MiR 701''' | ||
|Positive | |Positive | ||
|AZ Electronic Materials | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|High selectivity for dry etch. | |High selectivity for dry etch. | ||
|[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]] | |[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]] | ||
| Line 72: | Line 72: | ||
|'''AZ nLOF 2020''' | |'''AZ nLOF 2020''' | ||
|Negative | |Negative | ||
|AZ Electronic Materials | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
| | | | ||
|[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]] | |[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]] | ||