Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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Shot time as calculated by the JEOL system (left) and Raith eLine system (right). | Shot time as calculated by the JEOL system (left) and Raith eLine system (right). | ||
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==Exposure time== | |||
E-beam exposure is a serial writing process and the writing time (t) will scale with dose (D), area (A) and beam current (I) as: | |||
t = D*A/I | |||
It is thus essential to find the right balance between the area that needs to be defined and a beam current that will provide sufficient pattern fidelity and quality. During pattern writing the tool will also use time on cyclic calibration and stage movement as defined by the job path and pattern layout. The exposure time can be estimated based on the Excel sheet provided here.[[:File:Writing Time Estimator.xlsx]] | |||
= Exposure information = | = Exposure information = | ||