Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography click here]''' | ||
Author: Thomas Pedersen, DTU Nanolab. | Author and images: Thomas Pedersen, DTU Nanolab. | ||
[[Category: Equipment |Lithography exposure]] | [[Category: Equipment |Lithography exposure]] | ||
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| colspan="1" style="text-align:center;| | | colspan="1" style="text-align:center;| | ||
Exposure and development result of a positive resist (left) and a negative resist (right) | Exposure and development result of a positive resist (left) and a negative resist (right). | ||
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| colspan="1" style="text-align:center;| | | colspan="1" style="text-align:center;| | ||
Example feature filled with beam shots at one times beam diameter (left) and half beam diameter (right) | Example feature filled with beam shots at one times beam diameter (left) and half beam diameter (right). | ||
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| colspan="2" style="text-align:center;| | | colspan="2" style="text-align:center;| | ||
Shot time as calculated by the JEOL system (left) and Raith eLine system (right) | Shot time as calculated by the JEOL system (left) and Raith eLine system (right). | ||
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