Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions
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=== Discharge layer application === | === Discharge layer application === | ||
As exposure is done with an electron beam insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry When working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]] and [[Specific_Process_Knowledge/Thin film deposition//Wordentec|Wordentec]]. | As exposure is done with an electron beam insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry When working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]] and | ||
[[Specific_Process_Knowledge/Thin film deposition//Wordentec|Wordentec]]. | |||
== Development == | == Development == | ||