Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions
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== Substrate preparation == | == Substrate preparation == | ||
=== Resist coating === | === Resist coating === | ||
An appropriate EBL resist must naturally be applied to the substrate. DTU Nanolab supplies a number of standard resists, please consult the table below. The default positive EBL resist is AR-P 6200.09 (CSAR). CSAR installed on [[Specific_Process_Knowledge/Lithography/Coaters#Spin Coater: Gamma E-beam and UV|Spin Coater: Gamma E-beam and UV]] for spin coating of 2", 4" and 6" substrates. | An appropriate EBL resist must naturally be applied to the substrate. DTU Nanolab supplies a number of standard resists, please consult the table below. The default positive EBL resist is AR-P 6200.09 (CSAR). CSAR installed on [[Specific_Process_Knowledge/Lithography/Coaters#Spin Coater: Gamma E-beam and UV|Spin Coater: Gamma E-beam and UV]] for spin coating of 2", 4" and 6" substrates. For other substrate sizes (i.e. chips) or other resists [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|Spin Coater: LabSpin 02/03]] have to be used instead. The standard resist bottles are stored in the chemical cupboard in E-4. | ||
Contrary to most UV resist it is in general not advisable to use HMDS priming when coating with EBL resists. There can of course be exceptions to this but we do not recommend HMDS priming when using the DTU Nanolab supplied EBL resists. | |||
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