Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions

@@ Line 28: / Line 28: @@
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-|style="background:LightGrey; color:black"|Maximum writing area without stitching
+|style="background:LightGrey; color:black"|Maximum writing field
 |style="background:WhiteSmoke; color:black"|1mm x 1mm
 |style="background:WhiteSmoke; color:black"|1mm x 1mm
@@ Line 34: / Line 34: @@
 !style="background:silver; color:black" align="left" valign="top" rowspan="6"|Process parameter range
-|style="background:LightGrey; color:black"|E-beam voltage
+|style="background:LightGrey; color:black"|Acceleration voltage
 |style="background:WhiteSmoke; color:black"|100 kV
 |style="background:WhiteSmoke; color:black"|1-30 kV
 |-
-|style="background:LightGrey; color:black"|Scanning speed
+|style="background:LightGrey; color:black"|Scan speed
 |style="background:WhiteSmoke; color:black"|100 MHz
 |style="background:WhiteSmoke; color:black"|20 MHz
@@ Line 55: / Line 55: @@
 |style="background:LightGrey; color:black"|Beam current range
-|style="background:WhiteSmoke; color:black"|0.22 nA to 100 nA
+|style="background:WhiteSmoke; color:black"|0.1 nA to 100 nA
 |style="background:WhiteSmoke; color:black"|0.01 to 12 nA
 |-
-|style="background:LightGrey; color:black"|Dose range
+|style="background:LightGrey; color:black"|Minimum dwell time
-|style="background:WhiteSmoke; color:black"| 0.001 - 100000µC/cm<sup>2</sup>
+|style="background:WhiteSmoke; color:black"| 10 ns
-|style="background:WhiteSmoke; color:black"| ?
+|style="background:WhiteSmoke; color:black"| 50 ns
 |-