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Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions

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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Resolution
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR), 7 nm in HSQ
|style="background:WhiteSmoke; color:black"|7-10 nm minimum feature size
|style="background:WhiteSmoke; color:black"|~35 nm lines obtained in 180 nm thick resist (CSAR)
|style="background:WhiteSmoke; color:black"|35 nm minimum feature size
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