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Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Line 160: Line 160:
|Standard positive resist, very similar to ZEP520.
|Standard positive resist, very similar to ZEP520.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P6200_CSAR62english_Allresist_product-information.pdf AR-P 6200 info]  
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P6200_CSAR62english_Allresist_product-information.pdf AR-P 6200 info]  
|Gamma E-beam & UV or Labspin 2&3
|Gamma E-beam & UV or Labspin 2/3
|Anisole
|Anisole
|AR-600-546, AR-600-548, N50, MIBK:IPA
|AR-600-546, AR-600-548, N50, MIBK:IPA
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|Both e-beam and DUV sensitive resist.
|Both e-beam and DUV sensitive resist.
|
|
|
|Labspin 2/3
|
|
|AR 300-47
|AR 300-47
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|Both e-beam, DUV and UV-sensitive resist.
|Both e-beam, DUV and UV-sensitive resist.
|[[media:ARN7500.pdf‎|ARN7500.pdf‎]]
|[[media:ARN7500.pdf‎|ARN7500.pdf‎]]
|
|Labspin 2/3
|PGMEA
|PGMEA
|MIF726
|MIF726
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