Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 396: | Line 396: | ||
Back scattering is caused by electron-matter interaction in the substrate itself and electrons that are scattered back into the resist layer will provide a secondary (unwanted) exposure of the resist. The scattering distance is highly dependent on acceleration voltage and the substrate material. For a silicon substrate exposed at 100 kV the back scatter range is up to 30 µm and hence it is essential for many designs to account for this effect using PEC software. | Back scattering is caused by electron-matter interaction in the substrate itself and electrons that are scattered back into the resist layer will provide a secondary (unwanted) exposure of the resist. The scattering distance is highly dependent on acceleration voltage and the substrate material. For a silicon substrate exposed at 100 kV the back scatter range is up to 30 µm and hence it is essential for many designs to account for this effect using PEC software. | ||
At DTU Nanolab we primarily use Beamer from GenISys for PEC. The PEC process will result in a dose modulated design file where the relative exposure dose has been modulated to ensure that all parts of the design receives a uniform dose regardless of whether a design feature is in a sparsely populated or a heavily populated area of the design. | |||
== Proximity Error Correction (PEC) in BEAMER == | == Proximity Error Correction (PEC) in BEAMER == | ||