Jump to content

Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

← Older editNewer edit →
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
Line 394: Line 394:




Back scattering is caused by electron-matter interaction in the substrate itself and electrons that are scattered back into the resist layer will provide a secondary (unwanted) exposure of the resist. The scattering distance is highly dependent on acceleration voltage and the substrate material.  
Back scattering is caused by electron-matter interaction in the substrate itself and electrons that are scattered back into the resist layer will provide a secondary (unwanted) exposure of the resist. The scattering distance is highly dependent on acceleration voltage and the substrate material. For a silicon substrate exposed at 100 kV the back scatter range is up to 30 µm and hence it is essential for many designs to account for this effect using PEC software.
 
As the travel distance of backscattered electrons is fairly large, e-beam patterned structures will be influenced by adjacent e-beam patterned structures, i.e. a proximity effect. These proximity effects can be avoided either by simulating a proximity error correction (PEC) in BEAMER or by using the right stack of e-beam resist.




Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography"