Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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[https://www.microchemicals.com/micro/tds_az_5214e_photoresist.pdf Photoresist AZ® 5214 E (TDS)] | [https://www.microchemicals.com/micro/tds_az_5214e_photoresist.pdf Photoresist AZ® 5214 E (TDS)] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV| | |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Gamma UV]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Gamma e-beam & UV]]) | ||
Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]]) | |||
[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters| | |||
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8| | |||
|Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | ||
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[https://www.microchemicals.com/micro/tds_az_4500_series.pdf Photoresist AZ® 4562 (TDS)] | [https://www.microchemicals.com/micro/tds_az_4500_series.pdf Photoresist AZ® 4562 (TDS)] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV| | |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Gamma e-beam & UV]]) | ||
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8| | Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]]) | ||
|Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | ||
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[https://www.microchemicals.com/micro/tds_az_mir701_photoresist.pdf Photoresist AZ® MIR 701 (TDS)] | [https://www.microchemicals.com/micro/tds_az_mir701_photoresist.pdf Photoresist AZ® MIR 701 (TDS)] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV| | |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Gamma UV]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Gamma e-beam & UV]]) | ||
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV| | |||
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8| | Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]]) | ||
|Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | ||
| Line 168: | Line 159: | ||
[https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Photoresist AZ®nLOF 2020 (TDS)] | [https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Photoresist AZ®nLOF 2020 (TDS)] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV| | |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Gamma UV]]) | ||
[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters| | Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]]) | ||
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8| | |||
|Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | ||
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Resist thickness 1 µm to several 100 µm. | Resist thickness 1 µm to several 100 µm. | ||
|[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | |[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]]) | ||
[[Specific_Process_Knowledge/Lithography/Coaters# | |||
|Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]]) | ||