Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 74: | Line 74: | ||
|Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. | |Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. | ||
|[[media:AZ5214E.pdf|AZ5214E.pdf]] | |[[media:AZ5214E.pdf|AZ5214E.pdf]] | ||
[https://www.microchemicals.com/micro/tds_az_5214e_photoresist.pdf Photoresist AZ® 5214 E (TDS)] | |||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]], | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]], | ||
| Line 107: | Line 109: | ||
|For process with resist thickness between 6 and 25 µm. | |For process with resist thickness between 6 and 25 µm. | ||
|[[media:AZ4500.pdf|AZ4500.pdf]] | |[[media:AZ4500.pdf|AZ4500.pdf]] | ||
[https://www.microchemicals.com/micro/tds_az_4500_series.pdf Photoresist AZ® 4562 (TDS)] | |||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Spin Coater: Gamma e-beam & UV]], | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Spin Coater: Gamma e-beam & UV]], | ||
[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|A manual spin coater]] or | [[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|A manual spin coater]] or | ||
| Line 137: | Line 141: | ||
Resist thickness 1.5 - 4 µm. | Resist thickness 1.5 - 4 µm. | ||
|[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]] | |[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]] | ||
[https://www.microchemicals.com/micro/tds_az_mir701_photoresist.pdf Photoresist AZ® MIR 701 (TDS)] | |||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]], | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]], | ||