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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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|Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm.
|Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm.
|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[media:AZ5214E.pdf‎|AZ5214E.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]],
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]],


[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] or
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]] or


[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin coater: Manual Labspin]]
[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|a manual spin coater]]
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


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