Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 13: | Line 13: | ||
#* Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer. | #* Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask is an inverse copy of the pattern which is to remain on the wafer. | ||
::A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|here]]. | ::A list of UV lithography resist types available at DTU Danchip can be found [[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|here]]. | ||
# '''Thickness of resist''': In general, it is recommended to work with an aspect ratio of ~1, i.e. where the | # '''Thickness of resist''': In general, it is recommended to work with an aspect ratio of ~1, i.e. where the width of the pattern is of same size than the thickness of the resist. Furthermore, when you decide for the resist thickness, consider which transfer you need: | ||
#* For lift-off processes, we recommend resist thicknnesses ~5 times larger than the thickness of the metal to be lifted. | #* For lift-off processes, we recommend resist thicknnesses ~5 times larger than the thickness of the metal to be lifted. | ||
#* For dry or wet etch processes, investiagte the etch rates in resist as this might limit the minimum thickness of your resist. | #* For dry or wet etch processes, investiagte the etch rates in resist as this might limit the minimum thickness of your resist. | ||