Specific Process Knowledge/Lithography/UVLithography

Feedback to this page: click here

UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.

Mask Design

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Mask Design

Resist Overview

Resist	Polarity	Spectral sensitivity	Manufacturer	Comments	Technical reports	Spin Coating	Exposure	Developer	Rinse	Remover	Process flows (in docx-format)
AZ 5214E	Positive but the image can be reversed	310 - 420 nm	AZ Electronic Materials	Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm.	AZ5214E.pdf‎	SSE, KS Spinner or Spin coater: Manual Labspin	KS Aligner, Aligner: MA6 - 2 or Aligner-6inch	AZ 351B developer or AZ 726 MIF developer	DI water	Acetone	Process_Flow_AZ5214_pos.docx‎ Process_Flow_AZ5214_rev.docx‎
AZ 4562	Positive	310 - 440 nm	AZ Electronic Materials	For process with resist thickness between 6 and 25 µm.	AZ4500.pdf‎	SSE or KS Spinner	KS Aligner, Aligner: MA6 - 2 or Aligner-6inch	AZ 351B developer or AZ 726 MIF developer	DI water	Acetone	Process_Flow_thick_AZ4562.docx‎
AZ MiR 701	Positive	310 - 445 nm	AZ Electronic Materials	High selectivity for dry etch. Resist thickness 1 - 2 µm.	AZ_MiR_701.pdf‎	Spin Track 1 + 2	KS Aligner, Aligner: MA6 - 2 or Aligner-6inch	AZ 726 MIF developer	DI water	Remover 1165	Process_Flow_AZ_MiR701.docx‎
AZ nLOF 2020	Negative	310 - 380 nm	AZ Electronic Materials	Negative sidewalls for lift-off. Resist thickness 1.5 - 3 µm.	AZ_nLOF_2020.pdf‎	Spin Track 1 + 2	KS Aligner, Aligner: MA6 - 2 or Aligner-6inch	AZ 726 MIF developer	DI water	Remover 1165	Process_Flow_AZ_nLOF_2020.docx‎
SU-8	Negative	350 - 400 nm	Microchem	High aspect ratio. Resist thickness 1 µm to several 100 µm.	SU-8_DataSheet_2005.pdf‎, SU-8_DataSheet_2075.pdf‎	KS Spinner	Aligner-6inch, KS Aligner or Aligner: MA6 - 2	mr-Dev 600 developer (PGMEA)	IPA	Plasma ashing can remove crosslinked SU-8	Process_Flow_SU8_70um.docx‎

Process information

• UV Resist Overview
• Pretreatment
• Coaters
• UV Exposure
• Information on UV Exposure Dose
• Baking
• Development
• Striping Resist
• Lift-off

UV Lithography Equipment

Pretreatment HMDS BHF Oven 250C Coaters SSE Spinner Spin Track 1 + 2 KS Spinner Manual Spinner (Polymers) Manual Spinner 1 (Laurell) Spin coater: Manual Labspin Spray Coater UV Exposure KS Aligner Aligner-6inch III-V Aligner Inclined UV Lamp	Baking Hotplates Ovens Development Developer-1 and Developer-2 Developer-6inch SU8-Developer Developer-TMAH Developer TMAH UV-lithography Strip Plasma Asher 1 Plasma Asher 2 III-V Plasma Asher Rough Acetone Strip Fine Acetone Strip Lift-off Lift-off wet bench Lift-off (4", 6")