Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin coater: Manual Labspin]]
[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin coater: Manual Labspin]]
|'''Positive process:'''
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


23-33 mJ/cm<sup>2</sup> per µm resist for i-line.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or


½ dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
 
'''Reverse process:'''
 
10.5 mJ/cm<sup>2</sup> per µm resist for i-line, followed by 210 mJ/cm<sup>2</sup> flood exposure after reversal bake.
 
½ dose for broadband exposure.
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]



Revision as of 11:52, 11 November 2014

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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.


Mask Design

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Mask Design

Resist Overview

Resist Polarity Manufacturer Comments Technical reports Spin Coating Exposure Developer Rinse Remover Process flows (in docx-format)
AZ 5214E Positive but the image can be reversed AZ Electronic Materials Can be used for both positive and reverse processes with resist thickness between 1 and 4 µm. AZ5214E.pdf‎ SSE,

KS Spinner or

Spin coater: Manual Labspin

KS Aligner,

Aligner: MA6 - 2 or

Aligner-6inch

AZ 351B developer

or

AZ 726 MIF developer

DI water Acetone

Process_Flow_AZ5214_pos.docx‎ Process_Flow_AZ5214_rev.docx‎

AZ 4562 Positive AZ Electronic Materials For process with resist thickness between 6 and 25 µm. AZ4500.pdf‎ SSE or

KS Spinner

28 mJ/cm2 per µm resist for i-line, probably increasing with increasing thickness.

Multiple exposure recommended.

½ dose for broadband exposure.

AZ 351B developer

or

AZ 726 MIF developer

DI water Acetone Process_Flow_thick_AZ4562.docx‎
AZ MiR 701 Positive AZ Electronic Materials High selectivity for dry etch. AZ_MiR_701.pdf‎ Spin Track 1 + 2 Preliminary results:

105 mJ/cm2 per µm resist for i-line.

1/5 dose for broadband exposure.

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_MiR701.docx‎
AZ nLOF 2020 Negative AZ Electronic Materials Negative sidewalls for lift-off. AZ_nLOF_2020.pdf‎ Spin Track 1 + 2 <30 mJ/cm2 per µm resist for i-line, decreasing with increasing thickness.

Same dose for broadband exposure.

AZ 726 MIF developer DI water Remover 1165 Process_Flow_AZ_nLOF_2020.docx‎
SU-8 Negative Microchem SU-8_DataSheet_2005.pdf‎, SU-8_DataSheet_2075.pdf‎ KS Spinner Thickness and process dependent.

Refer to process datasheet and literature.

mr-Dev 600 developer (PGMEA) IPA Plasma ashing can remove crosslinked SU8. Process_Flow_SU8_70um.docx‎


UV Lithography Equipment


Pretreatment

Coaters

UV Exposure

Baking

Development

Strip

Lift-off