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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
Line 40: Line 40:
|'''Positive process:'''
|'''Positive process:'''


23-33 mJ/cm2 per µm resist for i-line.
23-33 mJ/cm<sup>2</sup> per µm resist for i-line.


½ dose (@365nm) for broadband exposure.  
½ dose (@365nm) for broadband exposure.  
Line 46: Line 46:
'''Reverse process:'''
'''Reverse process:'''


10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake.
10.5 mJ/cm<sup>2</sup> per µm resist for i-line, followed by 210 mJ/cm<sup>2</sup> flood exposure after reversal bake.


½ dose (@365nm) for broadband exposure.
½ dose (@365nm) for broadband exposure.
Line 64: Line 64:
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[media:AZ4500.pdf‎|AZ4500.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|28 mJ/cm2 per µm resist for i-line, probably increasing with increasing thickness.
|28 mJ/cm<sup>2</sup> per µm resist for i-line, probably increasing with increasing thickness.


Multiple exposure recommended.
Multiple exposure recommended.
Line 84: Line 84:
|Preliminary results:
|Preliminary results:


105 mJ/cm2 per µm resist for i-line.
105 mJ/cm<sup>2</sup> per µm resist for i-line.


1/5 dose (@365nm) for broadband exposure.
1/5 dose (@365nm) for broadband exposure.
Line 100: Line 100:
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|<30 mJ/cm2 per µm resist for i-line, decreasing with increasing thickness.
|<30 mJ/cm<sup>2</sup> per µm resist for i-line, decreasing with increasing thickness.


Same dose (@365nm) for broadband exposure.
Same dose (@365nm) for broadband exposure.
Line 107: Line 107:
|Remover 1165
|Remover 1165
|[[media:Process_Flow_AZ_nLOF_2020.docx‎|Process_Flow_AZ_nLOF_2020.docx‎]]
|[[media:Process_Flow_AZ_nLOF_2020.docx‎|Process_Flow_AZ_nLOF_2020.docx‎]]


|-
|-
Line 122: Line 121:
|Plasma ashing can remove crosslinked SU8.
|Plasma ashing can remove crosslinked SU8.
|[[media:Process_Flow_SU8_70um.docx‎|Process_Flow_SU8_70um.docx‎]]
|[[media:Process_Flow_SU8_70um.docx‎|Process_Flow_SU8_70um.docx‎]]


|}
|}


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