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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
Line 102: Line 102:
|<30 mJ/cm2 per µm resist for i-line, decreasing with increasing thickness.
|<30 mJ/cm2 per µm resist for i-line, decreasing with increasing thickness.


Same dose for broadband exposure.
Same dose (@365nm) for broadband exposure.
|AZ 726 MIF developer
|AZ 726 MIF developer
|DI water
|DI water
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