Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 38: | Line 38: | ||
|[[media:AZ5214E.pdf|AZ5214E.pdf]] | |[[media:AZ5214E.pdf|AZ5214E.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]], [[Specific_Process_Knowledge/Lithography/Coaters#III-V Spinner|III-V Spinner]] | |[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]], [[Specific_Process_Knowledge/Lithography/Coaters#III-V Spinner|III-V Spinner]] | ||
|Positive process: | |'''Positive process:''' | ||
23-33 mJ/cm2 per µm resist for i-line. | 23-33 mJ/cm2 per µm resist for i-line. | ||
½ dose for broadband exposure. | ½ dose (@365nm) for broadband exposure. | ||
Reverse process: | '''Reverse process:''' | ||
10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake. | 10.5 mJ/cm2 per µm resist for i-line, followed by 210 mJ/cm2 flood exposure after reversal bake. | ||
½ dose (@365nm) for broadband exposure. | |||
|AZ 351B developer | |AZ 351B developer | ||
|DI water | |DI water | ||
| Line 68: | Line 68: | ||
Multiple exposure recommended. | Multiple exposure recommended. | ||
½ dose (@365nm) for broadband exposure. | |||
|AZ 351B developer | |AZ 351B developer | ||
|DI water | |DI water | ||
| Line 86: | Line 86: | ||
105 mJ/cm2 per µm resist for i-line. | 105 mJ/cm2 per µm resist for i-line. | ||
1/5 dose for broadband exposure. | 1/5 dose (@365nm) for broadband exposure. | ||
|AZ 726 MIF developer | |AZ 726 MIF developer | ||
|DI water | |DI water | ||