Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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|Acetone | |Acetone | ||
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[[media:Process_Flow_AZ5214E_pos_vers2.docx |Process_Flow_AZ5214_pos.docx]] | |||
[[media:Process_Flow_AZ5214E_rev_vers2.docx |Process_Flow_AZ5214_rev.docx]] | |||
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|[[media:AZ4500.pdf|AZ4500.pdf]] | |[[media:AZ4500.pdf|AZ4500.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | |[[Specific_Process_Knowledge/Lithography/Coaters#SSE Spinner|SSE]], [[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | ||
|... | |28 mJ/cm2 per µm resist for i-line, possibly increasing for increasing thickness. | ||
Multiple exposure recommended. | |||
1/2 dose for broadband exposure. | |||
|AZ 351B developer | |AZ 351B developer | ||
|DI water | |DI water | ||
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|Preliminary results: | |Preliminary results: | ||
105 mJ/cm2 per µm resist for i-line | 105 mJ/cm2 per µm resist for i-line. | ||
1/5 dose for broadband exposure | 1/5 dose for broadband exposure. | ||
|AZ 726 MIF developer | |AZ 726 MIF developer | ||
|DI water | |DI water | ||
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|[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | |[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | |[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | ||
|Thickness and process dependent | |Thickness and process dependent. | ||
|PGMEA, mr-Dev 600 developer | |PGMEA, mr-Dev 600 developer | ||
|IPA | |IPA | ||
Revision as of 14:22, 25 March 2014
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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.
Resist Overview
| Resist | Polarity | Manufacturer | Comments | Technical reports | Spin Coating | Exposure dose | Developer | Rinse | Remover | Process flows (in docx-format) |
| AZ 5214E | Positive but can be reversed | AZ Electronic Materials | Can be used for both positive and reverse processes with resist thickness between 1 to 4um. | AZ5214E.pdf | SSE, KS Spinner, III-V Spinner | ... | AZ 351B developer | DI water | Acetone | |
| AZ 4562 | Positive | AZ Electronic Materials | For process with resist thickness between 6 and 25um. | AZ4500.pdf | SSE, KS Spinner | 28 mJ/cm2 per µm resist for i-line, possibly increasing for increasing thickness.
Multiple exposure recommended. 1/2 dose for broadband exposure. |
AZ 351B developer | DI water | Acetone | Process_Flow_thick_AZ4562.docx |
| AZ MiR 701 | Positive | AZ Electronic Materials | High selectivity for dry etch. | AZ_MiR_701.pdf | Spin Track 1 + 2 | Preliminary results:
105 mJ/cm2 per µm resist for i-line. 1/5 dose for broadband exposure. |
AZ 726 MIF developer | DI water | Remover 1165 | Process_Flow_AZ_MiR701.docx |
| AZ nLOF 2020 | Negative | AZ Electronic Materials | AZ_nLOF_2020.pdf | Spin Track 1 + 2 | <30 mJ/cm2 per µm resist for i-line.
Decreasing with increasing thickness. Same dose for broadband exposure. |
AZ 726 MIF developer | DI water | Remover 1165 | Process_Flow_AZ_nLOF_2020.docx
| |
| SU-8 | Negative | Microchem | SU-8_DataSheet_2005.pdf, SU-8_DataSheet_2075.pdf | KS Spinner | Thickness and process dependent. | PGMEA, mr-Dev 600 developer | IPA | Plasma ashing can remove crosslinked SU8. | Process_Flow_SU8_70um.docx
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