Specific Process Knowledge/Thin film deposition: Difference between revisions
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===Semiconductors=== | ===Semiconductors=== | ||
*[[Specific Process Knowledge/Lithography/DUVStepper#SÜSS Spinner-Stepper|SÜSS Spinner-Stepper]] | *[[Specific Process Knowledge/Lithography/DUVStepper#SÜSS Spinner-Stepper|SÜSS Spinner-Stepper]] | ||
Revision as of 12:56, 14 October 2013
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Choose material to deposit
Dielectrica
- Silicon Nitride - Silicon nitride and silicon oxynitride
- Silicon Oxide
- Titanium Oxide
Metals/elements
|
Period/Group |
IVB | VB | VIB | VIIIB | IB | IIIA | IVA |
| 3 | . | . | . | . | . | 13 Al Aluminium | 14 Si Silicon |
| 4 | 22 Ti Titanium | . | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | . | 32 Ge Germanium |
| 5 | . | . | 42 Mo Molybdenum | 46 Pd Palladium | 47 Ag Silver | . | 50 Sn Tin |
| 6 | . | 73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold | . | . |
Alloys
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- PVD co-sputter/evaporation - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermal evaporator
- Physimeca - E-beam evaporator (III-V lab)
- IBE/IBSD Ionfab 300 - Sputter deposition of high quality optical layers and milling/etching
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- Furnace LPCVD Nitride (4" and 6") - Deposition of silicon nitride
- Furnace LPCVD Polysilicon (4" and 6") - Deposition of polysilicon
- Furnace LPCVD TEOS (4") - Deposition of silicon oxide
- MVD - Molecular Vapor Deposition
- Black Magic PECVD - Black Magic PECVD (Carbon)
- Electroplating-Ni - Electrochemical deposition of nickel
Section under construction 
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Polymers | ||||||