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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''<br>
{{CC-bghe1}}




At the moment DANCHIP has 2(3) PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 has been decommissioned and PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD2 is for clean wafers both for silicon based materials and for III-V materials. At the moment PECVD2 is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD2 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DTU Nanolab has 2 PECVDs that can deposit silicon oxide with or without dopants of boron, phosphorus. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small amount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at Nanolab. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.


=Recipes on PECVD2 for deposition of silicon oxides=
== Deposition of SiO2 with PECVD4 ==
==Quality control recipe==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD2'''
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD4 - oxide '''
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1988&mach=17 The QC procedure for PECVD2]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=5093&mach=395 The QC procedure for PECVD4 - requires login]<br>
*[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=17 The newest QC data for PECVD2]
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=395 The newest QC data for PECVD4 - requires login]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"


! QC Recipe:
! QC Recipe:
! QCTOXIDE
! QCOXYD2
|-  
|-  
| SiH<sub>4</sub> flow
| SiH<sub>4</sub> flow
Line 24: Line 23:
|-
|-
|N<sub>2</sub>O flow
|N<sub>2</sub>O flow
|710 sccm
|1420 sccm
|-
|-
|N<sub>2</sub> flow
|N<sub>2</sub> flow
|392 sccm
|392 sccm
|-  
|-  
|Pressure
|Pressure
Line 33: Line 33:
|-
|-
|RF-power
|RF-power
|100 W @380kHz
|60 W
|-
|-
|Deposition time
|1 min
|}
|}
| align="center" valign="top"|
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!PECVD2
!PECVD4 - OXIDE
|-
|-
|Depostion rate of Silicon Oxide
|Deposition rate
|69nm/min - 119nm/min
|70 - 85 nm/min
|-
|-
|Non-uniformity of the deposition rate (std. deviation of 9 points)
|Non-uniformity
|0 - 2.8 nm
|<3.0
|-
|-
|Refractive index of the Silicon Oxide
|Refractive index
|1.41 - 1.53
|1.474 - 1.486
|-
|Non-uniformity of the refrative index (std. deviation of 9 points)
|0 - 0.07
|-
|-
|}
|}
Line 60: Line 55:
|}
|}


==SiO2 Standard, High Rate==
{| border="1" cellspacing="2" cellpadding="2"  
 
|-style="background:Black; color:White"
 
!|Recipe
 
!|Dep. rate [nm/min]
{| border="1" style="text-align: center; width: 400px; height: 150px;"
!|RI
! colspan="2" style="text-align: center;" style="background: #efefef;" | SiO2 Standard
!|Unif. [%]
!|Stress [MPa]
!|Comments
!|SiH4 [sccm]
!|N2O [sccm]
!|N2 [sccm]
!|B2H6
!|PH3
!|Pressure [mTorr]
!|Power [W]
!|Load
!|Tune
!|Time [mm:ss]
!|Tested
|-
|-
!N<math>_2</math>O-flow
|LF SiO<!-- Recipe -->
|1600 sccm
|75-78 nm/min<!-- Dep. rate [nm/min] -->
|1.480-1.483<!-- RI -->
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|[[/LF_SiO2 results|Click for more results]]<!-- Comments -->
|12<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|392<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- PH3 -->
|550 mTorr<!-- Pressure [mTorr] -->
|60LF"<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|1:15/13:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|-
|-
!SiH<math>_4</math>-flow
|HF SiO<!-- Recipe -->
|17 sccm
|63-64 nm/min<!-- Dep. rate [nm/min] -->
|1.476-1.477<!-- RI -->
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|[[/HF_SiO2 results|Click for more results]]<!-- Comments -->
|10<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|392<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|30HF<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|2:00/16:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|-
|-
!RF-power (380 kHz)
|waveguide <!-- Recipe -->
|380 W
|159.5 nm/min<!-- Dep. rate [nm/min] -->
|1.462<!-- RI -->
|&plusmn; 0.8%<!-- Unif. [%] -->
|Compressive: 121.9 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|17<!-- SiH4 [sccm] -->
|2000<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- PH3 -->
|300 mTorr<!-- Pressure [mTorr] -->
|700 LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|40:00<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|-
|-
!Process Pressure
|BPSG<!-- Recipe -->
|400 mTorr
|259 nm/min<!-- Dep. rate [nm/min] -->
|1.4593<!-- RI -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|Compressive: 36.7 MPa<!-- Stress [MPa] -->
|Measured after anneal in Clad1000<!-- Comments -->
|17<!-- SiH4 [sccm] -->
|1600<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|135<!-- B2H6 -->
|40<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|800 LF <!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00/56:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe <!--Tested -->
|-
|-
!Deposition rate
|BPSG low stress<!-- Recipe -->
|179 nm/min
|302 nm/min<!-- Dep. rate [nm/min] -->
|-
|1.4598<!-- RI -->
!index of refraction
|&plusmn; 1.7%<!-- Unif. [%] -->
|1.461
|Compressive: 1.4 MPa<!-- Stress [MPa] -->
|}
|Measured after anneal in Clad1000 <!-- Comments -->
|17<!-- SiH4 [sccm] -->
|1600<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|240<!-- B2H6 -->
|60<!-- PH3 -->
|500 mTorr<!-- Pressure [mTorr] -->
|800LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00 <!-- Time [mm:ss] -->
|February 2017 bghe <!--Tested -->


==SiO2 Standard, Low Rate==
{| border="1" style="text-align: center; width: 700px; height: 150px;"
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1STOxide
! colspan="2" style="text-align: left;" style="background: #efefef;" | A test recipe
|-
|-
!N<math>_2</math>-flow
|392 sccm
|392 sccm
|-
!N<math>_2</math>O-flow
|1420 sccm (setting in software is 710 sccm)
|1420 sccm (setting in software is 710 sccm)
|-
!SiH<math>_4</math>-flow
|12 sccm
|12 sccm
|-
!RF-power
|100 W
|150 W
|-
!Process Pressure
|550 mTorr
|700 mTorr
|-
!Deposition rate
|~100 nm/min
|109 &plusmn; 2 nm/min [tested: 2014-03-18]
|-
!index of refraction
|1.47
|1.465 [tested: 2014-03-18]
|-
!Uniformity
|<1 %
|3.2% over the wafer [tested: 2014-03-18]
|}


===Deposition rate as a function of deposition time using 1STOxide:===
{| border="1" style="text-align: center; width: 400px; height: 150px;"
|-
|
Deposition time [s]
|Oxide thickness [nm]
|Expected naturally grown oxide [nm]
|Deposition rate [nm/min]
|-
|15
|26.9
|2
|99.6
|-
|30
|51.9
|2
|99.8
|-
|60
|102.4
|2
|100.4
|-
|60
|102.7
|2
|100.7
|-
|120
|201.1
|2
|99.6
|}
|}


 
*[[/conformity|SEM images of the conformity of the layer on a structured surface]]
===Thickness uniformity of test wafer using the test recipe===
[[image:PECVD2 SiO2 Test20 wafer map.jpg|350x350px|left|thumb|Thickness uniformity of test wafer using the test recipe.]]


<br clear="all" />
<br clear="all" />
Line 170: Line 177:
=Recipes on PECVD3 for deposition of silicon oxides=
=Recipes on PECVD3 for deposition of silicon oxides=
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3 - oxide'''
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD3 - oxide'''
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3 - requires login]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3 - requires login]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
Line 180: Line 187:


! QC Recipe:
! QC Recipe:
! QCOXYD
! QCOXYD2
|-  
|-  
| SiH<sub>4</sub> flow
| SiH<sub>4</sub> flow
Line 193: Line 200:
|-  
|-  
|Pressure
|Pressure
|550 mTorr
|700 mTorr
|-
|-
|RF-power
|RF-power
|60 W
|150 W
|-
|-
|}
|}
Line 205: Line 212:
|-
|-
|Deposition rate
|Deposition rate
|66 - 89 nm/min
|97 - 112 nm/min
|-
|-
|Non-uniformity
|Non-uniformity
|<1.9%
|<2.0
|-
|-
|Refractive index
|Refractive index
|1.472 - 1.487
|1.467 - 1.474
|-
|-
|}
|}
Line 230: Line 237:
|Power [W]
|Power [W]
|Description
|Description
|-
|LFSiO2
|12
|1420
|392
|0
|0
|700
|150
|New QC implemented in April 2016
|-  
|-  
|LFSiO
|LFSiO
Line 248: Line 265:
|40
|40
|500
|500
|800LF
|800 LF
|BPSG glass for waveguide cladding layer  
|BPSG glass for waveguide cladding layer  
|}
|}
Line 260: Line 277:
|RI
|RI
|Uniformity [%]
|Uniformity [%]
|Stress
|Comment
|-
|LFSiO2
|105nm/min
|1.47
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|We have seen that this recipe does not deposit the first minute
|-  
|-  
|LFSiO
|LFSiO
Line 265: Line 291:
|~1.48
|~1.48
|<1
|<1
|not measured
|.
|-
|-
|1PBSG
|1PBSG
Line 270: Line 298:
|.
|.
|~17%
|~17%
|not measured
|.
|}
|}
<br clear="all" />


=Recipes on PECVD3 for deposition of doped oxide=
=Recipes on PECVD3 for deposition of doped oxide=
Line 287: Line 318:
|Description
|Description
|-  
|-  
|Core-Ge
|Core-Ge (not possible anymore as we have no Germanium)
|17
|17
|1600
|1600
Line 328: Line 359:
|}
|}


=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
==Quality control recipe (recipe changed in June 2015)==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD2'''
|-
|
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! QCTOXIDE
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|710 sccm
|-
|N<sub>2</sub> flow
|392 sccm
|-
|Pressure
|700 mTorr
|-
|RF-power
|150 W @380kHz
|-
|Deposition time
|15 min
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD2
|-
|Deposition rate of Silicon Oxide
|58 nm/min - 78nm/min
|-
|Non-uniformity of the deposition rate: ''(max-min)/2*AVG''
|<2%
|-
|Refractive index of the Silicon Oxide
|1.45 - 1.48
|-
|Non-uniformity of the refractive index: ''(max-min)/2*AVG''
|<0.2%
|-
|}
|-
|}
|}
==SiO2, High Rate <span style="color:Red">EXPIRED!!!</span>==
{| border="1" style="text-align: center; width: 400px; height: 150px;"
! colspan="2" style="text-align: center;" style="background: #efefef;" | 1SiO2HR
|-
!N<math>_2</math>O-flow
|1600 sccm
|-
!SiH<math>_4</math>-flow
|17 sccm
|-
!RF-power (380 kHz)
|380 W
|-
!Process Pressure
|400 mTorr
|-
!Deposition rate
|179 nm/min (before 2014)
|-
!index of refraction
|1.461 (before 2014)
|}
==SiO2 Low Rate <span style="color:Red">EXPIRED!!!</span>==
{| border="1" style="text-align: center; width: 700px; height: 150px;"
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1OX_old
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1SiO2 (as QC)
|-
!N<math>_2</math>-flow
|392 sccm
|392 sccm
|-
!N<math>_2</math>O-flow
|1420 sccm (setting in software is 710 sccm)
|1420 sccm (setting in software is 710 sccm)
|-
!SiH<math>_4</math>-flow
|12 sccm
|12 sccm
|-
!RF-power
|100 W
|150 W
|-
!Process Pressure
|550 mTorr
|700 mTorr
|-
!Deposition rate
|~100 nm/min
|
'''66 nm/min''' (2015-05-18 BGHE)<br>
'''68-69 nm/min''' (2015-04-24 BGHE)<br>
109 &plusmn; 2 nm/min [tested: 2014-03-18] ''Old shower head''
|-
!index of refraction
|1.47
|
'''1.463-1.464''' (2015-04-24 BGHE)<br>
1.465 [tested: 2014-03-18] ''Old shower head''
|-
!Uniformity
|<1 %
|
'''1%''' over the wafer (2015-04-24 BGHE)<br>
3.2% over the wafer [tested: 2014-03-18] ''Old shower head''
|-
!Comment
|This recipe is not running stable. The load capacitor tunes to zero and that it cannot go further. The results in a small reflected power that is varying due to the bad matching. This lead to variations in results from time to time. You may use it if you like, but please expect some variation in deposition rate.
|This recipe was developed because the old one didn't tune well. It may have a less good uniformity but should be more stable.
|}
===Deposition rate as a function of deposition time using 1Ox_old:===
{| border="1" style="text-align: center; width: 400px; height: 150px;"
|-
|
Deposition time [s]
|Oxide thickness [nm]
|Expected naturally grown oxide [nm]
|Deposition rate [nm/min]
|-
|15
|26.9
|2
|99.6
|-
|30
|51.9
|2
|99.8
|-
|60
|102.4
|2
|100.4
|-
|60
|102.7
|2
|100.7
|-
|120
|201.1
|2
|99.6
|}
===Thickness uniformity of test wafer using the test recipe===
[[image:PECVD2 SiO2 Test20 wafer map.jpg|350x350px|left|thumb|Thickness uniformity of test wafer using the test recipe.]]
<br clear="all" />
==BPSG: RI vs. B/P <span style="color:Red">EXPIRED!!!</span> ==
B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios. <br>
''Work done by BGHE@dtu in fall 2013'' <br>
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B2H6 flow [sccm]
|PH3 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|1PBSG
|17
|1600
|0
|See below
|See below
|500
|800LF
|BPSG glass for waveguide cladding layer
|}
LF=Low Frequency
{| border="1" style="text-align: center; width: 400px; height: 150px;"
|-
|Run number
|PH3 flow
|B2H6 flow
|B2H6/PH3
|RI
|Thickness
|-
|A1
|40 sccm
|135 sccm
|3.38
|1.4582
|3.28 µm
|-
|A2
|55 sccm
|115 sccm
|2.09
|1.4615
|3.13 µm
|-
|A3
|45 sccm
|130 sccm
|2.89
|1.4590
|3.13 µm
|-
|A4
|35 sccm
|140 sccm
|4.0
|1.4572
|3.22 µm
|-
|A5
|50 sccm
|120 sccm
|2.4
|1.4602
|3.14 µm
|-
|}
[[File:PECVD2_RI_vs_B-P_graph.jpg]]
<br clear="all" />


=Recipes on PECVD1 for deposition of silicon oxides <span style="color:Red">Expired!</span>=
=Recipes on PECVD1 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
===Recipes===
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7"
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