Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions

← Older edit
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,178 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,178 edits
 
(13 intermediate revisions by the same user not shown)
Line 7: Line 7:


DTU Nanolab has two EBL exposure systems, a JEOL JBX-9500FSZ and a Raith eLINE Plus system. The two systems are very different and new users should consult the EBL team to dertermine which system is appropriate for a particular project or type of sample. The general specifications of the two tools are given in the table below and may serve as a guideline for choice of system to use, especially the pros and cons list at the end of the table.
DTU Nanolab has two EBL exposure systems, a JEOL JBX-9500FSZ and a Raith eLINE Plus system. The two systems are very different and new users should consult the EBL team to dertermine which system is appropriate for a particular project or type of sample. The general specifications of the two tools are given in the table below and may serve as a guideline for choice of system to use, especially the pros and cons list at the end of the table.
For more information and specific workflows on either tool, please refer to their respective pages; [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|JEOL JBX-9500FSZ]] or [[Specific_Process_Knowledge/Lithography/EBeamLithography/eLINE|Raith eLINE Plus]].




Line 252: Line 249:
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|Anisole
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎|JJAP-51-06FC05.pdf‎]], [[media:JVB001037.pdf‎|JVB001037.pdf‎]]
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎|JJAP-51-06FC05‎]], [[media:JVB001037.pdf‎|JVB001037]]
|IPA
|IPA
|acetone/1165
|acetone/1165
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]]
|[[media:Process_Flow_ZEP.docx|Process Flow ZEP]]




Line 264: Line 261:
|[http://www.allresist.com AllResist]
|[http://www.allresist.com AllResist]
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:AR_P617.pdf‎|AR_P617.pdf‎]]
|[[media:AR_P617.pdf‎|AR_P617]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGME
|PGME
Line 270: Line 267:
|
|
|acetone/1165
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process Flow]]


|-
|-
Line 278: Line 275:
|[http://http://www.microresist.de/home_en.htm MicroResist]
|[http://http://www.microresist.de/home_en.htm MicroResist]
|Standard negative resist
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|Anisole
Line 284: Line 281:
|IPA
|IPA
|mr REM
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|[[media:Process_Flow_mrEBL6000.docx‎|Process Flow‎]]


|-
|-
Line 299: Line 296:
|
|
|[[media:Process Flow HSQ.docx|process flow HSQ]]
|[[media:Process Flow HSQ.docx|process flow HSQ]]
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]]
[[/Lithography/EBeamLithography/High resolution patterning with HSQ|High resolution patterning with HSQ]]


|-
|-
Line 307: Line 304:
|[http://www.allresist.com AllResist]
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.
|[[media:AR-N7500-7520.pdf‎|AR-N7500-7520.pdf‎]]
|[[media:AR-N7500-7520.pdf‎|AR-N7500-7520]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGMEA
|PGMEA
Line 320: Line 317:
|Positive
|Positive
| [http://www.allresist.com AllResist]
| [http://www.allresist.com AllResist]
|We have various types of PMMA in the cleanroom. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|
|
|
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
Line 342: Line 339:
|IPA
|IPA
|acetone/1165
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process Flow‎]]


|}
|}
Line 349: Line 346:


=== Discharge layer application ===
=== Discharge layer application ===
As exposure is done with an electron beam insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry When working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]] and [[/Wordentec|Wordentec]].
As exposure is done with an electron beam, insulating substrates will cause a build up of charge that will deflect the incoming beam and disturb pattern definition. It is therefore necesarry when working with insulating substrates or substrates with thick (> 200 nm) dielectric films to apply a discharge layer. This is typically applied on top of the EBL resist layer and must be removed in between exposure and development. The most common discharge layer is 20 nm thermally evaporated Al. Bear in mind that it should be thermally evaporated and not e-beam evaporated. Thermal evaporation of Al can be done in [[Specific_Process_Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]] and [[Specific_Process_Knowledge/Thin film deposition/Wordentec|Wordentec]].


[[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|Spin Coater: LabSpin 02/03]]
For samples with 2D materials such as graphene, HBN, etc., it is '''mandatory''' to apply a 20 nm Al layer on top of the resist in order to expose the substrate in the JEOL 9500 system. The Raith eLine system does not have this requirement.


== Development ==
The Al layer can be removed with MIF726 after exposure. MIF726 etch rate in Al is about 0.5 nm/s, although only about 1 nm/min in oxidized aluminium.


= E-beam resists =
Another possibility is to use a spin-on conductive layer such as AR-PC 5090. It can be removed with water after exposure. At the moment we do not have much experience with this, contact the EBL team if you are interested in this option.
== Standard E-beam resists and process guidelines ==


DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for easy spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.
=== Inspection ===


 
== Development ==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
 
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
 
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P6200_CSAR62english_Allresist_product-information.pdf AR-P 6200 info]
|Gamma E-beam & UV or Labspin 2/3
|Anisole
|
*AR-600-546
*AR-600-548
*N50
*MIBK:IPA
|IPA
|
*AR-600-71
*Remover 1165
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>
 
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARN8200|Medusa AR-N 8200]]'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam and DUV sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/SXAR-N8200-1_english_Allresist_product_information.pdf AR-N 8200 info]
|Labspin 2/3
|AR 600-07
|AR 300-47:DIW (1:1)
|DIW
|BOE
|
 
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7500'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-N7500_english_Allresist_product-information.pdf AR-N 7500 info]
|Labspin 2/3
|PGMEA
|
*AR 300-47:DIW (4:1)
*MIF726:DIW (8:5)
|DIW
|
*AR 300-73
*O2 plasma
|
 
|}
 
<br/>
 
== Non-Standard E-beam resists ==
 
It is possible to obtain permission to user other resists at DTU Nanolab, users must however provide these resists and possibly developers themselves. A non-exhaustive list of user supplied EBL resist used at DTU Nanolab and some process guidelines can be found in the table below.
 
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
 
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
 
|-
 
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ZEP520A|ZEP520A]]'''
|Positive resist, contact [mailto:Lithography@Nanolab.dtu.dk Lithography] if you plan to use this resist
|ZEON
|Positive resist
|[[media:ZEP520A.pdf|ZEP520A.pdf]], [[media:ZEP520A.xls|ZEP520A spin curves on SSE Spinner]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎|JJAP-51-06FC05.pdf‎]], [[media:JVB001037.pdf‎|JVB001037.pdf‎]]
|IPA
|acetone/1165
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]]
 
 
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARP617|Copolymer AR-P 617]]'''
|Positive
|[http://www.allresist.com AllResist]
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:AR_P617.pdf‎|AR_P617.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGME
|AR 600-55, MIBK:IPA
|
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
 
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
|Negative
|[http://http://www.microresist.de/home_en.htm MicroResist]
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|mr DEV
|IPA
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
 
|-
|-style="background:WhiteSmoke; color:black"
|'''HSQ (XR-1541)'''
|Negative
|DOW Corning
|Approved. Standard negative resist
|[[media:DowCorningHSQA.pdf|HSQ Dow Corning]], [[media:MSDS HSQ.pdf|MSDS HSQ]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|
|TMAH, AZ400K:H2O
|H2O
|
|[[media:Process Flow HSQ.docx|process flow HSQ]]
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]]
 
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7520'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.
|[[media:AR-N7500-7520.pdf‎|AR-N7500-7520.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGMEA
|AR 300-47, TMAH
|H2O
|
|
 
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/PMMA|PMMA]]'''
|Positive
| [http://www.allresist.com AllResist]
|We have various types of PMMA in the cleanroom. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|MIBK:IPA (1:3), IPA:H2O
|IPA
|acetone/1165/Pirahna
|
 
 
|-
|-style="background:LightGrey; color:black"
|'''ZEP7000'''
|Positive
|ZEON
|Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:ZEP7000.pdf|ZEP7000.pdf]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|ZED-500/Hexyl Acetate,n-amyl acetate, oxylene.
|IPA
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
 
|}
 
<br/>


== User resist bottles in the cleanroom ==
== User resist bottles in the cleanroom ==
Line 611: Line 404:


The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]].
The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]].
If your process can not utilize a aluminum discharge layer, Espacer might be another possibility to pursue. Espacer is a chemical that works as a discharging layer; it is spun onto the wafer on top of the resist and easily rinsed off the wafer after e-beam exposure. Visit this page for more information: [[Specific_Process_Knowledge/Lithography/Espacer|Espacer]]


= Literature on E-beam Lithography =
= Literature on E-beam Lithography =
* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary
* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/EBLLandingpage"