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Specific Process Knowledge/Thin film deposition/thermalevaporator

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Thermal evaporator- A system for deposition of metals

Positioned in cleanroom A-1.

The main purpose of the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate. It can also be used for Cr evaporation for the same purpose, and for evaporation of Ag, Au, Cu, and Ge. We have also attempted to evaporate Zn, but this resulted in heavy contamination of the chamber that required a lot of effort to clean and the process was not stable. If you would like to deposit other metals you are welcome to ask.

The user manual, APV, technical information and contact information can be found in LabManager:

Thermal Evaporator in LabManager


Process information

Materials evaporated in the Lesker Thermal Evaporator

We can also evaporate gold in this evaporator and can develop processes for other materials if requested.

Equipment performance and process related parameters

Purpose Deposition of metals
  • Thermal evaporation of metals
Performance Film thickness
  • 10Å - 1µm (Al and Ag)
  • up to 80 nm (Cr)
Deposition rate
  • 0.5-2 Å/s (Al), 5 Å/s (Ag), 1 Å/s (Cr)
  • In general, 0.5-10 Å/s is possible
  • We need to develop a new process for each rate
Thickness uniformity
  • approx. 13 % variation on a 4" wafer with 100 nm Al *
  • approx. 23 % variation on a 4" wafer with 100 nm Ag *
  • approx. 10 % variation on a 6" wafer with 100 nm Cr *
Pumpdown time
  • about 15 min
Process parameter range Process Temperature
  • Approximately room temperature
Process pressure
  • Below 4*10-6 mbar
Substrates Batch size
  • Up to 8" wafer
  • Or several smaller pieces
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Metals

* The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. Measurement by Rebecca Ettlinger, Nov. 2018.