Specific Process Knowledge/Lithography

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Mask Design

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Mask Design

Comparing lithography methods at DTU Danchip

	UV Lithography	DUV Stepper Lithography	E-beam Lithography	Nano Imprint Lithography	2-Photon Polymerization Lithography
Generel description	Pattern transfer via UltraViolet (UV) light	Pattern transfer via DeepUltraViolet (DUV) light	Pattern transfer via electron beam	Pattern transfer via hot embossing(HE)	Pattern transfer via direct writing
Pattern size range	~1µm and up	~200nm and up	~12nm - 1 µm	~20nm and up	3D: 0.3 µm spot; 1.3 µm high
Resist type	UV sensitive: AZ5214E, AZ4562 AZ MiR 701, AZ nLOF 2020 SU-8	DUV sensitive KSF M230Y KSF M35G	E-beam sensitive ZEP502A, CSAR, PMMA (positive) HSQ, Ma-N 2403, AR-N 7520 (negative)	Imprint polymers: Topas PMMA	UV cross-linking: IP photoresists SU-8
Resist thickness range	~0.5µm to 20µm	~50nm to 2µm	~30nm to 0.5 µm	~ 100nm to 2µm	droplet
Typical exposure time	2s-30s pr. wafer	Process depended, depends on pattern, pattern area and dose	Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I	Process depended, depends also on heating and cooling temperature rates	Process depended, depends on pattern and dose
Substrate size	small samples 50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers	We have cassettes that fit to 4 small samples (20mm, 12mm, 8mm, 4mm) 6 wafers of 50 mm in size 2 wafers of 100 mm in size 1 wafer of 150 mm in size Only one cassette can be loaded at time	small samples 50 mm wafers 100 mm wafers 150 mm wafers	Cover slides 50 mm wafers 100 mm wafers IBIDI
Allowed materials	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material

Equipment Pages

UV Lithography Pretreatment HMDS BHF 250C Oven for Pretreatment Coaters SSE Spinner Spin Track 1 + 2 KS Spinner Manual Spinner (Polymers) Manual Spinner 1 (Laurell) III-V Spinner Spray Coater UV Exposure KS Aligner Aligner-6inch III-V Aligner Inclined UV lamp Baking Hotplates Ovens Development Developer Bench Strip Plasma Asher 1 Plasma Asher 2 III-V Plasma Asher Rough Acetone Strip Fine Acetone Strip Lift-off Lift-off Wet Bench Lift-off (4", 6") Wafer Cleaning Spin dryers

DUV Stepper Lithography SÜSS Spinner-Stepper Process information DUV Stepper FPA-3000EX4 from Canon Process information Overview of performance E-Beam Lithography Performance Getting started E-beam resists and Process Flows Proximity Error Correction Charging of non-conductive substrates NanoImprint Lithography Molecular Vapour Deposition EVG NIL 3D Lithography 2-Photon Polymerization