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=Plasma Asher 1=
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
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=Plasma Asher 2=
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
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=Plasma Asher 3: Descum=
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
[[image:2017-03-15 13.12.45.jpg|400px|thumb|Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.]]
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014


The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
=Decommisioned tools=
 
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
In this machine, only Oxygen is used for processing.
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100 W (100%)<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
 
Other materials have not been tested.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
 
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=Plasma Asher 4=
[[File:PA5 front.jpg|400px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
 
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
 
 
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
 
'''Typical stripping parameters'''<br>
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20-30 minutes
*Time (full boat): 90 minutes
 
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==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|400px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers. The green area (~50% N<sub>2</sub>) covers the optimum range for both situations.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
 
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
 
{| class="wikitable"
|-
!  !! Single substrate !! Full boat
|-
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
! scope=row style="text-align: left;" | Wafers
| 1 || 25
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 500 sccm || 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| Tested parameter || Tested parameter
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.25 mbar || 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C
|}
 
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==Process chamber pressure for plasma asher 4 & 5==
[[File:PA_chamber_pressure_v3.png|400px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates. The green area covers the optimum range (~1.3 mbar) for both situations.|right]]
The ashing rate is related to the chamber pressure during processing. Process development tests found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
 
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
 
{| class="wikitable"
|-
!  !! Single substrate !! Full boat
|-
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
! scope=row style="text-align: left;" | Wafers
| 1 || 25
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 150 sccm || 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| Tested parameter || Tested parameter
|-
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 55°C
|}
 
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==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v4.png|400px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]]
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. The experiments indicate that the gas flow rate has only a minor impact on the ashing rate.
 
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
 
{| class="wikitable"
|-
!  !! Single substrate !! Full boat
|-
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|-
! scope=row style="text-align: left;" | Wafers
| 1 || 25
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| Tested parameter || Tested parameter
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar || 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C
|}
 
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==Process power for plasma asher 4 & 5==
[[File:PA_power_v3.png|400px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power increases ashing rate.
 
{| class="wikitable"
|-
!  !! Single substrate
|-
! scope=row style="text-align: left;" | Test results
| Ashing rate follows Power
|-
! scope=row style="text-align: left;" | Wafers
| 1
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| Tested parameter
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| 40°C
|}
 
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==Process temperature for plasma asher 4 & 5==
[[File:PA_temperature_v2.png|400px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.
 
{| class="wikitable"
|-
!  !! Single substrate
|-
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
|-
! scope=row style="text-align: left;" | Wafers
| 1
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
|}
 
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==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5==
[[File:PA_comparison_v3.png|400px|thumb|Comparison of ashing rate with different substrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]]
The ashing rate is highest for 100 mm substrates, lower for 150 mm substrates and even lower for 200 mm substrates.
 
All substrate sizes follows the same pattern:
*Ashing rate increases with a higher percentage nitrogen in the gas mix
*Ashing rate increases with a higher chamber pressure
*The total gas flow has only little influence on the ashing rate, but <i>slightly</i> favors the lower flow rate of 200 sccm, similar to previous experiment results
 
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'''Process parameter impact on ashing rate'''<br>
Investigating the ashing rate using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect:
<gallery mode="packed-hover" heights="150">
ParamEffect_100_mm_v1.png|100 mm parameter impact
ParamEffect_150_mm_v1.png|150 mm parameter impact
ParamEffect_200_mm_v1.png|200 mm parameter impact
</gallery>
 
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=Plasma Asher 5=
[[File:PA5 front.jpg|400px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
 
The Plasma Asher 5 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
 
 
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
 
 
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
 
===Process Information===
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|here]].
 
 
'''Processes specifically only for plasma asher 5:'''<br>
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
 
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=Resist Strip=
[[Image:Resist_strip.jpg|400px|thumb|Resist strip bench in D-3]]
 
This resist strip is only for wafers without metal and SU-8.
 
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
 
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
 
 
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
 
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==Overview of wet bench 06 and 07==
{| class="wikitable"
|-
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
! scope=row style="text-align: left;" | Process
| Wet resist strip || Metal lift-off process
|-
! scope=row style="text-align: left;" | Chemical
| Remover 1165 (NMP) || Remover 1165 (NMP)
|-
! scope=row style="text-align: left;" | Process temperature
| Up to 65°C || Up to 65°C
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 wafers || 1-25 wafers
|-
! scope=row style="text-align: left;" | Substrate size
|
*100 mm wafers
*150 mm wafers
|
*100 mm wafers
*150 mm wafers
|-
! scope=row style="text-align: left;" | Materials allowed
|
*Silicon
*Silicon oxide
*Silicon nitride
*Silicon oxynitride
| All metals except Type IV (Pb, Te)
|}


<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
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Revision as of 11:21, 12 January 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Resist stripping
  • Resist descum
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • 2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)


Plasma Ashing process parameters

Resist stripping (PA4 & PA5) Descum (PA3) Descum (PA4 & PA5) Surface treatment Other ashing of organic material
Process pressure 1.3 mbar 0.8 mbar 1.3 mbar 0.5-1.5 mbar 0.5-1.5 mbar
Process gasses
  • O2 (100 sccm)
  • N2 (100 sccm)
  • O2 (45 sccm)
  • O2 (100 sccm)
  • N2 (100 sccm)
  • O2
  • N2
  • CF4
  • O2
Process power 1000 W 100 W 200 W 150-1000 W 150-1000 W
Process time 20-90 minutes 1-10 minutes 5-15 minutes Seconds to minutes Many hours, material dependent
Substrate batch 1-25 1-2 1-25 1 1


Plasma Asher 3: Descum

Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.

Product name: Diener Pico Plasma Asher
Year of purchase: 2014

The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.

In this machine, only Oxygen is used for processing.

Typical process parameters:
Process: Photoresist descumming
Pressure: 0.2-0.8 mbar
Gas: 45 sccm O2
Power: 100 W (100%)
Time: 1 -10 minutes (depending on photoresist type and thickness)

Other materials have not been tested.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Detailed information about descum processing on Plasma asher 3: Descum can be found here.

Plasma Asher 4

Plasma asher 4 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 4 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Plasma asher 4 has the following material restrictions:

  • No metals allowed
  • No metal oxides allowed
  • No III-V materials allowed

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.

  • O2: 100 sccm
  • N2: 100 sccm
  • Pressure (DSC): 1.3 mbar
  • Power: 1000 W
  • Time (single wafer): 20-30 minutes
  • Time (full boat): 90 minutes


Process development notes

Information about process development for plasma asher 04 and plasma asher 05 can be found here.

Plasma Asher 5

Plasma asher 5 in cleanroom E-5.

Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024

The Plasma Asher 5 can be used for the following processes:

  • Photoresist stripping
  • Descumming
  • Surface cleaning
  • Removal of organic passivation layers and masks


Furthermore plasma processing using CF4 in plasma asher 5 can be used for:

  • Etching of glass and ceramic
  • Etching of SiO2, Si3N4, Si
  • Removal of polyimide layers


Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Process Information

Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 here.


Processes specifically only for plasma asher 5:


Resist Strip

Resist strip bench in D-3

This resist strip is only for wafers without metal and SU-8.

There are one Remover 1165 bath for stripping and one IPA bath for rinsing.

Here are the main rules for resist strip use:

  • Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
  • After the strip rinse your wafers in the IPA bath for 2-3 min.
  • Rinse your wafers for 4-5 min. in running water after stripping.


The user manual and contact information can be found in LabManager: Resist Strip - requires login

Overview of wet bench 06 and 07

Resist Strip Lift-off
Process Wet resist strip Metal lift-off process
Chemical Remover 1165 (NMP) Remover 1165 (NMP)
Process temperature Up to 65°C Up to 65°C
Substrate batch 1-25 wafers 1-25 wafers
Substrate size
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Materials allowed
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
 All metals except Type IV (Pb, Te)


Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02. Information about decommissioned tool can be found here.

Plasma asher 2 was decommissioned 2024-12-02. Information about decommissioned tool can be found here.

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