Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher
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SiO2 can be etched in the Plasma Asher using CF4
Test work done January 2014 by Lis Nielsen and Berit Herstrøm @Nanolab
SiO2 can be etched in the Plasma Asher using CF4 and aluminum as a masking material. This gives an isotropic etch. In test2 the SiO2 layer has been etched through and there is a small over etch in the Silicon substrate. The masking material is 100 nm Al. Etch rate and uniformity measurements have been done on wafers with no mask.
- Images of isotropic SiO2 etch in the Plasma asher: Test 2
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| Plasma Asher parameter settings and results for the tests | ||||||
| Test1 | Test2 | |||||
|---|---|---|---|---|---|---|
| O2 flow | 0 sccm | 0 sccm | ||||
| N2 flow | 0 sccm | 0 sccm | ||||
| CF4 flow | 200 sccm | 200 sccm | ||||
| Power | 1000 W | 1000 W | ||||
| Process Time | 10 min | 50 min | ||||
| Average Etch rate on wafer (5 points measured) | 22.6 nm/min | 31.8 nm/min | ||||
| Non-uniformity over the wafer (5 points measured) | ±10.8 % | ±11.0 % | ||||
| Non-uniformity plot | ||||||
