Specific Process Knowledge/Lithography/Strip: Difference between revisions

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 =Plasma Asher 3: Descum=
 [[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
+The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
-The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate or a few smaller pieces.
+In this machine, only Oxygen and Nitrogen are used for processing.
-In this machine, only O2 and N2 gases are used for processes.
+<b>Typical process parameters:</b><br>
+Process: Photoresist descumming<br>
-<b>Typical process parameters when operating the equipment:</b><br>
-Process: Photoresist descum<br>
 Pressure: 0.2-0.8 mbar<br>
-Gas: O<sub>2</sub><br>
+Gas: 45 sccm O<sub>2</sub><br>
-Power: 50-100%<br>
+Power: 100%<br>
-Time:1 -10 minutes (depending on photoresist type and thickness)<br>
+Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
-The other materials have not been tested yet.
+Other materials have not been tested.
 The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''