Specific Process Knowledge/Lithography/Strip: Difference between revisions
| Line 286: | Line 286: | ||
==Process gas flow rate for plasma asher 4 & 5== | ==Process gas flow rate for plasma asher 4 & 5== | ||
[[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers.|right]] | [[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers.|right]] | ||
The ashing rate is related to the total gas flow rate during processing. | The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. | ||
Please note that the ashing rate for a full boat is approximately ten times slower, than when processing a single substrate. | Please note that the ashing rate for a full boat is approximately ten times slower, than when processing a single substrate. | ||