Specific Process Knowledge/Lithography/Strip: Difference between revisions
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=Plasma Asher 4= | =Plasma Asher 4= | ||
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]] | [[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]] | ||
< | The Plasma Asher 4 can be used for the following processes: | ||
*Photoresist stripping | |||
*Descumming | |||
*Surface cleaning | |||
*Removal of organic passivation layers and masks | |||
Plasma asher 4 has the following material restrictions: | |||
*No metals allowed | |||
*No metal oxides allowed | |||
*No III-V materials allowed | |||
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | |||
===Process Information=== | |||
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 4|Descum using plasma asher 4]] | |||
'''Typical stripping parameters''' | |||
*Resist: 1.5 µm AZ 5214E | |||
*Substrate: 100 mm Si | |||
*O<sub>2</sub>: 140 sccm | |||
*N<sub>2</sub>: 60 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 1000 W | |||
*Time (single wafer): 20 minutes | |||
*Time (full boat): 90 minutes | |||
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login''' | |||
===Process Information=== | |||
*[[Specific Process Knowledge/Lithography/Descum|Descum]] | |||
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