Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
| Line 588: | Line 588: | ||
Development of EBL resist can be done in two ways, either in beakers or on the semi-automatic E-beam developer tool, [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam|Developer:E-beam.]] The latter is equipped with ZED N50 for development of CSAR (AR-P 6200). The system can handle chips or wafers up to 8”. It has predefined develop cycle times of 15, 30, 60 and 120 seconds. For other developers users have to use the EBL development fumehood in E4 and manually develop their substrates in beakers of appropriate size. Please observe there are beakers dedicated solvent developers such as isopropanol and other beakers dedicated alkaline developers. | Development of EBL resist can be done in two ways, either in beakers or on the semi-automatic E-beam developer tool, [[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam|Developer:E-beam.]] The latter is equipped with ZED N50 for development of CSAR (AR-P 6200). The system can handle chips or wafers up to 8”. It has predefined develop cycle times of 15, 30, 60 and 120 seconds. For other developers users have to use the EBL development fumehood in E4 and manually develop their substrates in beakers of appropriate size. Please observe there are beakers dedicated solvent developers such as isopropanol and other beakers dedicated alkaline developers. | ||
For this turorial job we simply put the 4" wafer on the center of the vacuum chuck, clamp it with vacuum, select the 60 sec | For this turorial job we simply put the 4" wafer on the center of the vacuum chuck, clamp it with vacuum, select the 60 sec recipe and press start. | ||
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;" | {| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;" | ||