Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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==Deposition of Silicon Oxide using e-beam evaporation== | ==Deposition of Silicon Oxide using e-beam evaporation== | ||
It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | ||
*[[/Deposition of SiO2 in E-Beam Evaporator Temescal-2|Deposition of SiO2 using E-Beam Evaporator (10-pockets)]] | |||
==Wet SiO2 growth == | ==Wet SiO2 growth == | ||