Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Overview of wet bench 06 and 07== | ==Overview of wet bench 06 and 07== | ||
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! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] | ! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] | ||
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]] | ! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]] | ||
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!General description''' | |||
| | |Wet stripping of resist | ||
|Lift-off process | |||
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!Chemical solution | |||
|NMP Remover 1165 | |NMP Remover 1165 | ||
|NMP Remover 1165 | |NMP Remover 1165 | ||
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!Process temperature | |||
|Up to 60°C | |Up to 60°C | ||
|Up to 60°C | |Up to 60°C | ||
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!Batch size | |||
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1 - 25 wafers | 1 - 25 wafers | ||
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1 - 25 wafers | 1 - 25 wafers | ||
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!Size of substrate | |||
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*100 mm wafers | *100 mm wafers | ||
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*150 mm wafers | *150 mm wafers | ||
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!Allowed materials | |||
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*Silicon | *Silicon | ||
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*Silicon Nitride | *Silicon Nitride | ||
*Silicon Oxynitride | *Silicon Oxynitride | ||
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All metals except Type IV (Pb, Te) | |||
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