Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
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| Line 33: | Line 33: | ||
|± 2.1-2.7%<!-- Unif. [%] --> | |± 2.1-2.7%<!-- Unif. [%] --> | ||
|compressive 309 MPa <!-- Stress [MPa] --> | |compressive 309 MPa <!-- Stress [MPa] --> | ||
|<!-- Comments --> | |[[/LF_SiO2 results|more results]]<!-- Comments --> | ||
|12<!-- SiH4 [sccm] --> | |12<!-- SiH4 [sccm] --> | ||
|1420<!-- N2O [sccm] --> | |1420<!-- N2O [sccm] --> | ||