Specific Process Knowledge/Lithography: Difference between revisions
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===[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]=== | ===[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]=== | ||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | *[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | ||
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*[[Specific Process Knowledge/Lithography/UVExposure#Inclined UV lamp|Inclined UV lamp]] | *[[Specific Process Knowledge/Lithography/UVExposure#Inclined UV lamp|Inclined UV lamp]] | ||
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===[[Specific Process Knowledge/Lithography/UVExposure|Electron Beam Exposure]]=== | ===[[Specific Process Knowledge/Lithography/UVExposure|Electron Beam Exposure]]=== | ||
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*[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer TMAH UV-lithography]] | *[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer TMAH UV-lithography]] | ||
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===[[Specific Process Knowledge/Lithography/Strip|Strip]]=== | ===[[Specific Process Knowledge/Lithography/Strip|Strip]]=== | ||
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==NanoImprint Lithography== | ===NanoImprint Lithography=== | ||
*[[Specific Process Knowledge/Thin film deposition/MVD|Molecular Vapour Deposition]] | *[[Specific Process Knowledge/Thin film deposition/MVD|Molecular Vapour Deposition]] | ||
*[[Specific Process Knowledge/Lithography/NanoImprintLithography#EVG NIL|EVG NIL]] | *[[Specific Process Knowledge/Lithography/NanoImprintLithography#EVG NIL|EVG NIL]] | ||
==3D Lithography== | ===3D Lithography=== | ||
*[[Specific Process Knowledge/Lithography/3DLithography#2-Photon Polymerization|2-Photon Polymerization]] | *[[Specific Process Knowledge/Lithography/3DLithography#2-Photon Polymerization|2-Photon Polymerization]] | ||
Revision as of 11:34, 28 January 2016

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Direct writing via electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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