Specific Process Knowledge/Lithography

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Comparing lithography methods at DTU Danchip

	UV Lithography	DUV Stepper Lithography	E-beam Lithography	Nano Imprint Lithography	2-Photon Polymerization Lithography
Generel description	Pattern transfer via UltraViolet (UV) light	Pattern transfer via DeepUltraViolet (DUV) light	Direct writing via electron beam	Pattern transfer via hot embossing(HE)	Direct writing via IR laser
Pattern size range	~1.25 µm and up	~200 nm and up	~12 nm - 1 µm	~20 nm and up	3D voxel through transparent substrate: 0.3 µm diameter; 0.6 µm high 2D spot on opaque substrate: 0.6 µm diameter
Resist type	UV sensitive: AZ 5214E, AZ 4562, AZ MiR 701 (positive) AZ 5214E, AZ nLOF 2020, SU-8 (negative)	DUV sensitive JSR KRF M230Y, JSR KRF M35G (positive) UVN2300-0.8 (negative)	E-beam sensitive ZEP502A, CSAR , PMMA (positive) HSQ, Ma-N 2403, AR-N 7520 (negative)	Imprint polymers: Topas PMMA	UV sensitive: IP photoresists, SU-8 (3D) AZ resists (2D)
Resist thickness range	~0.5µm to 20µm	~50nm to 2µm	~30nm to 0.5 µm	~ 100nm to 2µm	droplet or coating
Typical exposure time	2s-30s pr. wafer	Process depended, depends on pattern, pattern area and dose	Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I	Process depended, depends also on heating and cooling temperature rates	Process depended, depends on pattern and dose
Substrate size	small samples 50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers	We have cassettes that fit to 4 small samples (20mm, 12mm, 8mm, 4mm) 6 wafers of 50 mm in size 2 wafers of 100 mm in size 1 wafer of 150 mm in size Only one cassette can be loaded at time	small samples 50 mm wafers 100 mm wafers 150 mm wafers	Cover slides 50 mm wafers 100 mm wafers IBIDI
Allowed materials	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material	Any standard cleanroom material

Pattern Design and Mask Fabrication

In order to realize your device you will need a way to draw the patterns that define the structures in the different layers on the wafer. This is done in a drawing tool for mask layout. The output is a file you send to a mask house, which in return supplies you with a number of photolithographic masks. Each mask is a glass plate with a chromium pattern that mimics a layer in your layout.

Please read more details here: Pattern Design and Mask Fabrication

Process Pages

UV Lithography

• Spin Coating of AZ5214E, AZ5206, and LOR7B/AZ5206

Deep UV Lithography

• Spin Coater
• Stepper

E-beam Lithography

• Semi Chemically-amplified Resist (CSAR) AR-P 6200 (AllResist)
• mr EBL 6000.1 negative e-beam resist (MircoResist)
• ZEP520A (ZEON)
• Copolymer AR-P 617.05 (AllResist)
• Espacer

NanoImprint Lithography

• Imprinting

Equipment Pages

UV Lithography

Pretreatment HMDS BHF Oven 250C Coaters SSE Spinner Spin Track 1 + 2 Spin Coater: RCD8 Manual Spinner (Polymers) Manual Spinner 1 (Laurell) Spin coater: Manual Labspin Spray Coater UV Exposure KS Aligner Aligner-6inch III-V Aligner Inclined UV lamp	Baking Hotplates Ovens Development Developer-1 and Developer-2 Developer-6inch SU8-Developer Developer-TMAH Developer TMAH UV-lithography Strip Plasma Asher 1 Plasma Asher 2 III-V Plasma Asher Rough Acetone Strip Fine Acetone Strip Lift-off Lift-off Wet Bench Lift-off (4", 6")

DUV Stepper Lithography

• SÜSS Spinner-Stepper
• DUV Stepper FPA-3000EX4 from Canon
  • Overview of performance

E-Beam Lithography

• Performance
• Getting started
• E-beam resists and Process Flows
• Proximity Error Correction
• Charging of non-conductive substrates

NanoImprint Lithography

• Molecular Vapour Deposition
• EVG NIL

3D Lithography

• 2-Photon Polymerization

Manuals

• User Manual for JEOL JBX-9500 E-beam Writer